BUK7M67-60EX

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The BUK7M67-60EX is a type of discrete insulated-gate bipolar transistor (IGBT) module, designed for applications that require high current and high frequency switching. It is an efficient and reliable choice for applications such as power conversion and motor control, as well as for general power semiconductor applications. The device contains an integrated circuit (IC) chip with an integrated insulated-gate FET and a Controller IC. The insulated-gate FET provides fast and efficient switching, while the Controller IC provides voltage control.

The BUK7M67-60EX is built using a structure called MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. This type of transistor is commonly used in power converter and motor control applications due to its high current and high frequency switching capabilities. It works by using a metal-oxide gate to control current flow through a source electrode to the drain electrode. When the gate is activated, it attracts current and the device switches on, allowing the current to flow. The gate can be controlled by external signals, allowing for precise timing and accurate control over the current flow.

The BUK7M67-60EX is designed for use in PFC circuits and DC-DC converter applications. The device has an exceptionally low on-state resistance, allowing for high current flow. It is also designed to be resistant to over-voltage and EMI, making it a reliable and efficient choice for applications in variable speed drives, industrial welding and laser power supplies, among others.

The BUK7M67-60EX is a single MOSFET device that is capable of delivering a maximum drain source voltage of 600V, a maximum blocking voltage of 650V, and an On-state RDSon of 2.5Ω. It has an operating temperature range of -40℃ to 125℃ and is rated for an I T(AV) average on-state current of 65A, making it suitable for high-current applications. Additionally, the BUK7M67-60EX has an integrated protection circuit that is designed to detect and protect against an over-temperature or over-current situation.

In summary, the BUK7M67-60EX is a highly efficient and reliable discrete insulated-gate bipolar transistor module. It is built with a single MOSFET structure and is designed for use in applications requiring high frequency switching and high current delivery. It is highly resistant to over-voltage and EMI and has an integrated protection circuit for detecting and preventing over-temperature and over-current situations. Finally, it is rated for an average on-state current of 65A, making it an excellent choice for PFC circuits and DC-DC converters.

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