BUK7107-40ATC,118 Allicdata Electronics
Allicdata Part #:

BUK7107-40ATC,118-ND

Manufacturer Part#:

BUK7107-40ATC,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 75A D2PAK
More Detail: N-Channel 40V 75A (Tc) 272W (Tc) Surface Mount SOT...
DataSheet: BUK7107-40ATC,118 datasheetBUK7107-40ATC,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Supplier Device Package: SOT-426
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 272W (Tc)
FET Feature: Temperature Sensing Diode
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BUK7107-40ATC, 118 (also known as BUK7107-40ATCx/118) is a type of N-channel Enhancement Mode Accurate PowerMOSFET that belongs to the STripFET™ VI family. In this MOSFET family, transistors are specially designed for power applications with improved accuracy and controlled performance. This type of MOSFET is best used as an amplifier or to tap and switch signals in medium and high voltage applications. The device is made up of three layers of silicon separated by two gates. The two gates form the surface of the device. The upper gate is called the drain and the lower gate is called the source. The gate on the top gate is referred to as the bulk and the bottom gate is referred to as the body. The voltage that is applied to the body of the MOSFET affects both the drain and the source of the devices.The BUK7107-40ATC, 118 is a dual-gate MOSFET with a voltage rating of -40V to 140V, transconductance of 0.45 S, and power dissipation rate of 0.55W. The voltage applied to the body affects the conducting characteristics of the device. When the voltage applied on the body is higher than the threshold voltage (Vt) of the device, the device is in “ON” state, allowing the flow of current from the source to the drain of the device. In “OFF” state, the voltage applied on the body is lower than Vt. The operating temperature range for the BUK7107-40ATC, 118 MOSFET is -40°C to +140°C. The maximum junction temperature of the device is +150°C. The MOSFET has an Undergate Turn On voltage rating of 25V and an UNDERGATE Capacitance rating of 30Pf. BUK7107-40ATC, 118 is an ideal choice for power applications as it offers improved accuracy and controlled performance. It is also used in applications such as switching high-speed signals, switching medium voltage signals, and as an amplifier. The device is widely used in high-voltage applications such as solar cells and power inverters, as well as low voltage applications such as switching regulators and power supplies. In conclusion, BUK7107-40ATC, 118 is a high-performance N-Channel Enhancement Mode Accurate Power MOSFET designed for improved accuracy and controlled performance in medium and high voltage applications. The device is well suited for applications such as switching, amplifying and handling medium voltage signals.

The specific data is subject to PDF, and the above content is for reference

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