Allicdata Part #: | 1727-5247-2-ND |
Manufacturer Part#: |
BUK7606-55B,118 |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 75A D2PAK |
More Detail: | N-Channel 55V 75A (Tc) 254W (Tc) Surface Mount D2P... |
DataSheet: | BUK7606-55B,118 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.60773 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 254W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 64nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK7606-55B, 1188 is a type of Field Effect Transistor (FET) specifically a metal-oxide semiconductor FET (MOSFET). MOSFETs are a type of unipolar transistor which means it is a type of field-effect transistor using an insulated gate and relying on voltage rather than current to control the electrical flow. The BUK7606-55B, 1188 is a single MOSFET and operates in enhancement mode. This single MOSFET has many uses including power supply systems and voltage management systems.
The BUK7606-55B, 1188 has a drain current rating of 8A with a maximum voltage of 80V and maximum power dissipation of 444W. The maximum junction temperature is 175C, the drain-source junction breakdown voltage is 100V, and the input capacitance is 950pF. It has a thermal resistance from junction to ambient of 15C/W and features a very low on-state resistance. This device is also RoHS compliant.
The BUK7606-55B, 1188 is a single-MOSFET device, meaning that it is a transistor that uses only one type of gate electrode to control the current flow, as opposed to dual gate/dual gate MOSFETs. In this single-MOSFET design, one metal-oxide-silicon gate is placed atop the channel connecting the drain and the source. This gate is insulated from the channel by an oxide layer which acts as a switch in the transistor when voltage is applied.
The working principle of the device is relatively straightforward. When voltage is applied to the gate, it creates a field in the channel which attracts electrons, thereby causing current to flow. The gate forms a series of positive-roped implants, which reduce the drain-source voltage each time it is raised in order to control the current that flows through the channel. The gate effectively acts as a switch, allowing or denying current flow, depending on the state of the gate.
The BUK7606-55B, 1188 is a versatile device, with a wide range of applications, as any dual-mode single-MOSFET would, but it’s most often used in voltage management systems and power supplies. This makes it ideal for use in a variety of systems including motor control, switching systems, and airborne subsystems. It is also commonly used in audio systems and can be used to allow or deny current flow to speakers and other audio components.
The BUK7606-55B, 1188 is a single MOSFET device, as described above and is one of the more versatile and useful components in a wide range of electronic-based applications and systems. With an impressive drain current rating of 8A and maximum voltage of 80V, and excellent thermal resistance characteristics, it can be used in a variety of applications and systems, ranging from motor control and voltage management to audio systems and more.
The specific data is subject to PDF, and the above content is for reference
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