BUK7277-55A,118 Allicdata Electronics
Allicdata Part #:

1727-7160-2-ND

Manufacturer Part#:

BUK7277-55A,118

Price: $ 0.20
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 18A DPAK
More Detail: N-Channel 55V 18A (Tc) 51W (Tc) Surface Mount DPAK
DataSheet: BUK7277-55A,118 datasheetBUK7277-55A,118 Datasheet/PDF
Quantity: 10000
2500 +: $ 0.17586
Stock 10000Can Ship Immediately
$ 0.2
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 51W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK7277-55A,118 Transistors - FETs, MOSFETs - Single: Application Field and Working Principle

The BUK7277-55A,118 Transistors is a MOSFET (Metal Oxide Semiconductor Field Effect Transistors) device that is designed for switching applications in low voltage and low current circuits. The device is a three-terminal MOSFET that behaves as a resistive element between the drain and source terminals. The primary feature of this device is its low on-state resistance that allows it to switch quickly and smoothly when compared to other device technologies.

This series of transistor is used in various applications to switch on or off a signal or power to the load. Its applications are plentiful and range from general-purpose logic gates, to Schmitt trigger circuits, logic-level switches, signal amplifiers, RF signal processors, and power management systems.

The BUK7277-55A,118 Transistor works on a simple mechanism, as it is a type of MOSFET, it works on the principle of capacitive coupling between the gate and the drain resulting in a voltage drop across the device. This voltage drop is the basis for providing the switching function of the device. The magnitude and direction of the current is determined by the gate voltage which is controlled by the external circuitry.

In order to properly and effectively use this device, the external source and bias circuits should be designed properly. The source should be designed to provide the appropriate voltage swing and avoid exceeding the drain current capability of the MOSFET. The bias circuit should provide the gate with the appropriate voltage to ensure the device is operating correctly and efficiently. The gate impedance should be designed between maximum current limit and minimum power dissipation, depending on the specific application for which the MOSFET is being utilized.

In summary, the BUK7277-55A,118 Transistor is a highly efficient low-voltage and low-current FET that is suitable for use in a variety of switching applications. It is capable of switching quickly and smoothly while consuming minimal power. A proper circuit design should ensure that the external source and bias circuits are configured to provide the desired voltage swings and current limits to ensure reliable, efficient operation of the MOSFET.

Moreover, by understanding the operating principles and understanding the functionality of this transistor device, engineers and technicians can better leverage the advantages associated with using MOSFETs. This can result in significant power savings, with some applications experiencing an impressive reduction in power cycling and switching times over traditional BJTs and other technologies.

The specific data is subject to PDF, and the above content is for reference

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