BUK7528-55A,127

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The BUK7528-55A,127 is a type of digital transistor that falls in the category of field effect transistors (FETs), namely, metal-oxide semiconductor transistors (MOSFETs). The ‘127’ connotes the drain-source current, which is nominal at 12A. The MOSFET can block an opposing voltage up to 75V. The suffix ‘A’ in the product name, BUK7528-55A,127, refers to the type of package the MOSFET is contained in, the SO-8.

The BUK7528-55A,127 MOSFET is highly suitable for applications such as power switching, motor control, and voltage regulation where high efficiency is of the utmost importance. It can be switched on and off quickly, making it suitable for use as a digital switch. Its gate voltage control allows users to switch on and off the device easily, thus preventing voltage peaks.

The MOSFET is built for power dissipation. It has a low thermal resistance junction-to-case, making it suitable for high power operations. It comes with the protection diode for reverse current, which makes it suitable for applications requiring reverse current protection.

The working principle of the BUK75 28-55A,127 MOSFET is based on the operation of the capacitance between the gate and the drain channels. Depending on the incident electric field, the device exhibits a variety of working modes. A transistor is essentially a current amplifier; it amplifies current and voltage, enabling the device to operate efficiently in applications.

When the gate voltage increases, the electric field around the transistor increases, changing the distributions of electrons in the channel. Hence, if the drain voltage exceeds the gate voltage, a current flows through the drain terminal and the transistor operates in an enhancing mode. If the drain voltage is lower than the gate voltage, then the transistor operates in a depletion mode.

The BUK7528-55A,127 MOSFET is a key component for applications that rely on maximum efficiency and high performance. It utilizes the electric field from the gate to control Drain voltage, which enables efficient operations at high currents and voltages. Its integrated protection diode prevents reverse current from limiting the performance of the system. Its low thermal resistance allows for power dissipation and its blocking voltage can go up to 75V making it suitable for a wide range of applications.

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