BUK7K25-40E,115

Series:	Automotive, AEC-Q101, TrenchMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	27A
Rds On (Max) @ Id, Vgs:	25 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	7.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	525pF @ 25V
Power - Max:	32W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-1205, 8-LFPAK56
Supplier Device Package:	LFPAK56D

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BUK7K25-40E, 115 is one of the transistors that belong to the FETs, MOSFETs - Arrays category. It is a family of N-channel logic-level enhancement mode field-effect transistors (FETs) with a high-performance silicon nitride insulated gate field-effect. The integrated circuit has a maximum voltage rating of up to 115 volts and a semi-conductor structure of 8-channel N-channel enhancement mode field-effect transistors (FETs).BUK7K25-40E, 115 transistors are mainly used in a variety of applications in automotive, industrial, and electronics systems. Automotive applications include motor control, sensing and actuation. Industrial applications include control of electrical loads, and other components. In the electronics systems, these transistors are used for functions like power management, signal conditioning, and high-speed switching requirements.BUK7K25-40E, 115 transistors offer several advantages. Its N-channel logic-level enhancement mode field-effect transistors (FETs) feature high-speed performance, low on-state resistance, and low gate threshold voltage. The integrated circuit also offers low input capacitance and low gate charge. Reset voltage, current, and record temperature are all low, making it ideal for use in high temperature applications.BUK7K25-40E, 115 transistors work on the principle of an insulated gate field-effect. When a voltage is applied to the gate, an electric field will be created between the gate and the substrate, causing electrons to flow from the substrate to the gate. This will create a positive charge on the substrate, which attracts negatively-charged holes from the source terminal, allowing the current to flow between the source and the drain. The current starts to flow once a threshold voltage is reached. The current then increases exponentially with increasing voltage. The output voltage is determined by the resistance between the gate and the drain. With an increasing gate voltage, the gate-drain resistance increases, resulting in a lower output voltage.In summary, BUK7K25-40E, 115 transistors are widely used in a variety of applications such as motor control, sensing and actuation, and power management. This integrated circuit can cope with high temperature applications due to its low reset voltage, current and record temperature. It works on the principle of insulated gate field-effect, where electrons flow from the substrate to the gate when a voltage is applied, forming a positive charge and allowing current to flow between the source and the drain.

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