BUK7K29-100EX

BUK7K29-100EX is a high-side N-channel power transistor array module which functions as an ideal switch for inductive loads with its low ON-state resistance and high breakdown voltage. It provides protection to the power switch and control circuit from inductive kickback. Both functional and structural advantages are seen when using this transistor array module.

The chip is terminally connected with an external common terminal for the drain, individual supply voltage and gate control for each of the four transistors contained in the array. The current withstanding capability of 100A is possible when operating the device at 25°C.

The BUK7K29-100EX provides flexibility to the designer due to the the ability to configure the four transistors in multiple combinations, such as two low side drivers, two high side drivers, two single-ended outputs or even two half-bridge outputs. The capacity of the transistors is also impressive, with a maximum drain-source breakdown voltage of 500V.

Though the chip provides impressive performance, it has some shortcomings as well. The power dissipation of the each transistor is quite high, requiring careful thermal management of the system. Moreover, the gate-source threshold voltage of 1.5V imposes some restrictions on the design of the control circuit, eventually limiting its usability.

The main application of the BUK7K29-100EX is in power switching circuits which require fast switching from off to on, like DC-DC converters, HVAC systems, automotive active circuit protection and solar power systems. To get the optimal performance from the chip, it is important to select the suitable external components for the circuit, such as input/output capacitors, snubber circuits and protection resistors.

The working principle of the BUK7K29-100EX is based on the MOSFET which is the type of field-effect transistor (FET) used in this device. It is an insulated gate type, with gate insulation provided by an oxide interface layer between the gate electrode and the source/drain channels.

When the gate of the MOSFET is connected to an appropriate voltage and ground, it will create an electric field in the oxide layer, leading to a change in the current flow in the channel. When the field increases, the resistance of the channel decreases and more current flows through the device, turning it on.

The operation of the BUK7K29-100EX is simple and straightforward. When the control signal of the circuit is high and the gate is appropriately connected to the voltage, the four transistors will turn on, allowing for current to flow through the commonly shared drain terminal. Conversely, when the control signal is low, the transistors will be turned off and no current will flow through the drain terminal.

In conclusion, the BUK7K29-100EX is a high-side N-channel power transistor array module which offers the designers high drain-source breakdown voltage, low ON-state resistance, high current withstanding capability and a flexible application field. Although the power dissipation of the device might be a downside, careful thermal management of the system can make sure that the chip will perform optimally.