BUK7K35-60EX

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	20.7A
Rds On (Max) @ Id, Vgs:	30 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	794pF @ 25V
Power - Max:	38W
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-1205, 8-LFPAK56
Supplier Device Package:	LFPAK56D

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Introduction to BUK7K35-60EXBUK7K35-60EX is a transistor array manufactured by Infineon Technologies. It is a two-dimensional, high-density, high-performance pitch array consisting of discrete low-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs). It is designed for use in automotive and industrial power control applications. The BUK7K35-60EX is a 650V MOSFET array which offers superior performance characteristics in low to medium power applications.Application FieldThe BUK7K35-60EX can be applied in a variety of power control applications, including automotive and industrial systems. It is well-suited for applications such as power switches, rectification and DC-DC conversion. Additionally, the BUK7K35-60EX is commonly used in devices which require high-efficiency and low-power consumption, as well as in applications which require reliable power switching with fast switching speeds.Benefits and AdvantagesThe BUK7K35-60EX offers several benefits to automotive and industrial systems, including superior performance and low-power consumption. In addition, it has a very low on-state resistance (RDSON) of 8.7mOhms Tj = 25°C and a high breakdown voltage of 650V, which makes it well-suited for use in power control applications. Furthermore, its low input capacitance and low gate charge allows for fast switching speeds, making it an ideal choice for applications that require high switching speed.Other advantages of the BUK7K35-60EX include its low input voltage leakage and peak voltage, which are both crucial for maintaining optimum performance. In addition, it has an ESD rating of 4KV, making it highly resistant to electrostatic discharge. Furthermore, its total gate charge is lower than that of most similar transistors.The Working Principle of BUK7K35-60EXThe working principle of a MOSFET is based on transistor action, which describes the relationship between voltage, current, resistance and power. In particular, the MOSFET operates on the principle of source-to-drain current flow, which is enabled by the gate voltage applied to the transistor\'s gate electrode.In this particular set-up, voltage is applied to the gate of the MOSFET, which switches the transistor on or off by controlling the amount of current that is allowed to flow through the drain-to-source channel. In general, when the gate voltage is above the threshold voltage, the transistor is on, allowing for current flow. When the gate voltage is below the threshold voltage, the transistor is off and no current can flow through the channel.ConclusionThe BUK7K35-60EX is a high-performance MOSFET array specified for use in power control applications in automotive and industrial systems. It offers a range of benefits, such as low-power consumption, high efficiency, fast switching speeds and a high breakdown voltage. Furthermore, it operates on the principle of source-to-drain current flow, which is enabled by the gate voltage applied to the transistor’s gate electrode. As such, the BUK7K35-60EX is a reliable and efficient transistor array for use in power control applications.

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