BUK7K89-100EX

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The BUK7K89-100EX is an enhancement mode, N-Channel MOS Field Effect Transistor (FET) array with two cascaded logic level insulated gate drive stages. It is an excellent choice for motor drive applications which require precise, bidirectional switching of heavy loads. Due to its two-stage gate drive circuit, the BUK7K89-100EX can be used in both high side and low side switching applications.

The BUK7K89-100EX is composed of two independent N-channel MOSFETs. Each of these N-channel MOSFETs has its own insulated gate voltage drive stage and its own logic level gate drive capacity, allowing for separate on and off switching of individual gates. This provides excellent current control and precisely repeatable turn-on/turn-off transitions for a wide variety of current carrying loads.

The BUK7K89-100EX has a low-gate voltage drop of only 0.7 volts, making it suitable for applications that need high current switching efficiency. The remote gate-drive capability of the BUK7K89-100EX also makes it ideal for applications which require off-board logic level drive signals.

The BUK7K89-100EX also features a high-density package which is capable of dissipating large amounts of power. The BUK7K89-100EX is also RoHS compliant and rated to operate up to -55ᵒC to +125ᵒC; making it well suited for high temperature applications. The BUK7K89-100EX is available in a variety of package styles making it suitable for a wide range of applications from automotive and industrial to consumer electronics.

The working principle of the BUK7K89-100EX is based on the dual insulated gate voltage drive stages, allowing for separate on and off switching of individual MOSFETs. These independent MOSFETs can be used in both high side and low side switching applications, as well as in a variety of current-carrying load types. The BUK7K89-100EX is optimized for maximum current and power dissipation at a low gate voltage drop, providing excellent current control and precise transition times.

The BUK7K89-100EX is an excellent choice for use in a variety of motor drive applications. The two cascaded logic level insulated gate drive stages allow for bidirectional current flow and precise, repeatable turn-on/turn-off transitions. Combined with its low-gate voltage drop, the BUK7K89-100EX can provide extremely efficient and reliable motor switching in a variety of motor control applications.

The BUK7K89-100EX is also well suited for PWM applications. Its low gate voltage drop helps to minimize EMI and maximize the system efficiency. The ability to control each MOSFET gate independently also makes the BUK7K89-100EX an ideal choice for applications which require more complicated, multiphase switching scenarios.

In summary, the BUK7K89-100EX is a two-stage gate drive insulated gate FET array. It features an excellent gate voltage drop, gate drive current rating, and power dissipation in a high-density package with RoHS compliance. The BUK7K89-100EX is capable of precise bidirectional switching of heavy loads in motor drive and PWM applications, making it an ideal choice for a number of different applications.

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