BUK9K12-60EX Allicdata Electronics
Allicdata Part #:

1727-1897-2-ND

Manufacturer Part#:

BUK9K12-60EX

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 60V 35A 56LFPAK
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 35A 68W Surfac...
DataSheet: BUK9K12-60EX datasheetBUK9K12-60EX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.45698
Stock 1000Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A
Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3470pF @ 25V
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Description

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The BUK9K12-60EX is an N-channel MOSFET with two source pins and a single drain pin. This type of transistor has a wide range of applications, ranging from high-current switching in power supplies to audio and motor control. The BUK9K12-60EX is part of a larger family of multi-channel MOSFET arrays, which combine several transistors in a single package to further reduce size and cost.

MOSFET devices are a type of Field-Effect Transistor (FET), where voltage applied to a single gate pin controls a number of other pins, usually a source and a drain. This is in contrast to the more traditional Bipolar Junction Transistor (BJT), which requires two external connections to control current flow. The FETs can provide higher operating speeds, better noise immunity, and higher output current when compared to BJTs. The BUK9K12-60EX is a particular type of MOSFET known as an “enhancement-mode” device, meaning that current between the source and drain pins is only enabled when a potential is applied to the gate pin.

On the BUK9K12-60EX, the gate pin can accept input voltages up to 20V. Above this voltage, the device is considered an “off” state, and no current is able to flow between the source and drain pins. However, when an appropriate level of negative voltage is applied to the gate pin, the device will enter “on” state and draw current from the source pin, through the device, and into the drain pin. In this state, the device can support a maximum continuous drain current up to 60A, making it ideal for applications such as automotive battery chargers, high-current switching, and motor control.

The BUK9K12-60EX is also uniquely suited for applications in which multiple devices must be controlled by a single gate pin. In this scenario, a larger MOSFET array such as the BUK9K12-60EX can be used instead of a single MOSFET device. In the array, each pin is separated by a dielectric material, which allows the device to support larger voltages. This makes them ideal for high-voltage, high-current applications such as welding and power supplies.

In summary, the BUK9K12-60EX is a high-current N-channel MOSFET array well-suited for applications in which multiple devices must be controlled by a single gate pin. In addition, the device’s ability to support voltages up to 20V makes it well-suited for high-voltage, high-current applications such as welding and power supplies. The BUK9K12-60EX is a viable solution whenever economical high-current switching or motor control is required.

The specific data is subject to PDF, and the above content is for reference

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