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Transistors - FETs, MOSFETs - Single

BUK9612-55B,118 is a single, N-channel logic enhancement MOSFET transistor, designed with breakdown voltage specifications of 55V, it exhibits high switching speed, low on-state resistance, good electricity and safe operation.

Application Field

BUK9612-55B,118 features and specifications make it suitable for various applications. Its breakdown voltage at Vgs = 4.5 and Vds = 25V is 55V, gate charge is equal to 2uC, RDS(ON) is equal to 0.65ohm and switch time is as low as 5ns.

The transistor comes with standard gate protection against ESD, which is especially important for mobile and portable applications. Common application fields forBUK9612-55B,118 include telecommunications, automotive and automotive-related, industrial and residential applications, power management and measurement, computer peripherals, and consumer, battery-powered applications.

Working Principle

Just like any other transistor, BUK9612-55B,118 works on the principle of amplification – it amplifies a small current (input) into an amplified current at the output. The transistor amplifies current, not voltage, that is, it is a current-controlled device. It works as a switch to open or close the connection.

When the base or gate terminal of the transistor (input) receives a small current, a larger current (output) is produced at the collector and emitter terminals. The working of a MOSFET can be explained by the movement of electrons (conduction) when it is ‘switched’ on, and the depletion of electrons (no conduction) when it is switched ‘off’.

When the input (gate) voltage is lower than the threshold, the transistor remains off and no current flows from the drain to the source. When the voltage is increased to >= threshold voltage (Vgs), the transistor is ‘on’ and current flows through it. The amount of current that flows through the transistor depends on several factors, including the input voltage (Vgs), the power supply voltage, and the drain resistance.

When the input voltage exceeds the threshold voltage, the MOSFET is ‘on’ and will remain ‘on’ until the drain-source voltage falls below a certain level. This is termed as the ‘saturation region’ of the drive cycle. The current value in the saturation region is determined by two things, namely the power supply voltage and the drain-source resistance (Rds).

When the drain-source voltage is reduced below the threshold voltage, the MOSFET switches ‘off’ and remains ‘off’ until the input voltage rises above the threshold voltage again. This is the ‘turn-off’ state of the drive cycle.

Thus, BUK9612-55B, 118 can be used as a switch to open or close the connection – it amplifies small current input into larger current at the output. Its excellent switching speed, low on-state resistance and breakdown voltage specifications make it suitable for various applications mentioned above.

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