Allicdata Part #: | BUK9Y19-55B/C2,115-ND |
Manufacturer Part#: |
BUK9Y19-55B/C2,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 55V 46A LFPAK |
More Detail: | N-Channel 55V 46A Surface Mount LFPAK56, Power-SO... |
DataSheet: | BUK9Y19-55B/C2,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 46A |
Rds On (Max) @ Id, Vgs: | 17.3 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1992pF @ 25V |
FET Feature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK56, Power-SO8 |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Description
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A BUK9Y19-55B/C2,115 MOSFET is a type of field-effect transistor (FET) that utilizes metal-oxide semiconductor technology to control current flow in an electronic circuit. It is an important component of many electronic systems, such as power supplies and amplifiers. The BUK9Y19-55B/C2,115 is an N-channel MOSFET with a maximum drain-source voltage of 55 V and a continuous drain current of 115 A.A field-effect transistor, or FET, is a type of transistor that utilizes the electric field created by one or more electrodes on a semiconductor material to control current flow. It is the most commonly used transistor in consumer and industrial electronics. There are two main types of FETs: the Junction FET (JFET) and the Metal-Oxide Semiconductor FET (MOSFET).MOSFETS operate differently from JFETs. MOSFETS use an oxide barrier formed between the gate and the conductive channel of the transistor to control current. When a voltage is applied to the gate, it creates an electric field that attracts electrons from the source and throws them into the channel, creating a conductive path between the source and drain. The conductivity of the channel is controlled by the amount of voltage applied to the gate. This is referred to as field-effect modulation.The BUK9Y19-55B/C2,115 is an N-channel MOSFET that can be used in a variety of applications. It is commonly used in power supplies, amplifiers, and and sensing circuits. It is also used as a switch in high-power switching applications, as well as motor control and steering applications. Additionally, it can be used as a protection device in automotive and industrial systems.In power supplies, the BUK9Y19-55B/C2,115 can be used to regulate current flow. By using an additional gate voltage, it can be turned on or off, allowing for flexible control over the current path. In amplifiers, the device can be used as a switch to route signals to a given output. In sensing circuits, the device can be used to detect a current or voltage in a given direction, and can be used to control other circuits accordingly.The BUK9Y19-55B/C2,115 is a versatile MOSFET that can be used in a variety of applications. Its ability to control current flow and provide protection in electronic systems makes it an ideal choice for a wide range of applications. Additionally, its low power consumption makes it an ideal choice for power-sensitive applications.The specific data is subject to PDF, and the above content is for reference
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