Allicdata Part #: | 1727-7317-2-ND |
Manufacturer Part#: |
BUK9M52-40EX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 17.6A LFPAK33 |
More Detail: | N-Channel 40V 17.6A 31W Surface Mount LFPAK33 |
DataSheet: | BUK9M52-40EX Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 31W |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 407pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 4.5nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17.6A |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9M52-40EX is an advanced field-effect transistor (FET) designed to provide high efficiency and electrical control in electronic devices. A FET is a three-terminal device that uses an electric field to control the current flow between two terminals. It is composed of two independent regions of opposite charge, called the gate and the drain, which are separated by an insulating gate dielectric layer. FETs are commonly used in digital circuitry due to their low power consumption and high switching frequencies, making them ideal for portable electronics, such as cellphones, laptops and portable gaming consoles.
The BUK9M52-40EX is a surface-mount FET (SMFET) with advanced characteristics that make it useful in various applications. It has an N-channel FET design, meaning it has an N-type semiconductor substrate with a P-type surface layer. The N-channel provides high mobility for fast switching between the on and off states and low on-resistance for efficient power consumption.
The BUK9M52-40EX can be used in various application fields, including audio, motor control, power switching, and remote control. It is also suitable for automotive applications, such as fuel pumps, relays, and parking brake control. The device is rated at 93A peak drain current and +50V drain-source voltage, and has a low on-resistance of 22 mΩ.
The basic working principle of the BUK9M52-40EX is that when a voltage is applied to the gate terminal, the electric field generated between the gate and the drain attracts electrons and forms an inversion layer in the P-type surface layer. This inversion layer forms a conducting channel between the source and drain, allowing a current to flow. As the voltage to the gate terminal is increased, the conducting channel thickness decreases, thereby naturally limiting the current through the device. When the voltage to the gate is below threshold, the conducting channel is no longer present and the device is off.
In conclusion, the BUK9M52-40EX is an advanced single N-channel FET with excellent characteristics for use in a variety of applications. It offers high efficiency and good electrical control through its fundamental working principle and its low RDS(ON). It can be used in audio applications, motor control, power switching, and automotive applications to enhance system performance.
The specific data is subject to PDF, and the above content is for reference
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