Allicdata Part #: | 568-6634-5-ND |
Manufacturer Part#: |
BUK953R2-40B,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 100A TO220AB |
More Detail: | N-Channel 40V 100A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | BUK953R2-40B,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10502pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 94nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 2.8 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK953R2-40B,127 belongs to the Single FETs, MOSFETs category of transistors. It is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that features N-Channel enhancement mode. It has a drain source voltage VDSS of 40V, a drain current ID of 10A, and a VGS(th) of 4V. In addition, it has a very low on-state resistance (RDS(on)) of 0.0093 Ω and a typical gate charge Qg of 9.7nC.MOSFETs are used in a variety of electronics applications such as power regulators and converters, analog and digital circuits, signal amplification, switching, and more. Particularly, the BUK953R2-40B,127 is suitable for high-power applications, as it is able to handle a high current with low on-state resistance allowed by its channel enhancement mode. This makes it ideal for applications in LED lighting, robotics, and other heavy-duty projects, as it can be used to control and switch high currents with minimal power loss.The working principle behind the BUK953R2-40B,127 is based on the concept of a field effect transistor. A field effect transistor has three pins, the source, the drain, and the gate, which are used to control the current flow through the channel. When a voltage is applied between the gate and the source, a field effect will be generated, which can change the conductivity of the channel. This field effect can be used to control the level of current that passes through the transistor and thus, can be used for various purposes.When the BUK953R2-40B,127 is used as a switch, it is important to understand how it works. This type of transistor has two operating modes, the enhancement mode and the depletion mode. In the depletion mode, the gate is used to deplete the channel’s conductivity, while in the enhancement mode, the gate is used to increase the channel’s conductivity. When in the enhancement mode and a positive voltage is applied to the gate, the channel’s conductivity increases, thus allowing a higher current to pass through the channel. In contrast, if the voltage on the gate is decreased, the channel’s conductivity decreases and thus, the current passing through it will decrease as well.The BUK953R2-40B,127 is an ideal choice for a variety of electronic applications due to its low on-state resistance, high current rating, and ability to control and switch high currents with minimal power loss. It is used in a wide range of high-power applications such as LED lighting, robotics, etc. and its channel-enhancement mode allows for high currents to be controlled and switched with minimal power loss. This makes the BUK953R2-40B,127 a great choice for any design requiring power-efficient, high-performance transistor solutions.
The specific data is subject to PDF, and the above content is for reference
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