Allicdata Part #: | BUK9604-40A,118-ND |
Manufacturer Part#: |
BUK9604-40A,118 |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 75A D2PAK |
More Detail: | N-Channel 40V 75A (Tc) 300W (Tc) Surface Mount D2P... |
DataSheet: | BUK9604-40A,118 Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 0.58536 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.3V, 10V |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 128nC @ 5V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 8260pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9604-40A, 118 (N-channel enhancement mode vertical D-MOSFET transistor) is a single FET transistor that functions as a switch and amplifier. It is mainly used to switch and amplify a signal in order to control a wide variety of electrical and electronic devices.
When using the BUK9604-40A, 118 the drive current needs to exceed the on-resistance. This transistor uses a vertical structure for uniform electrical characteristics. A drain-gate voltage applied to it creates a channel, and when it is used as a low power switch, this type of N-channel enhancement mode MOSFET conveys no signal current. It ensures that there is minimal distortion of the signal voltage.
Some of the common applications of the BUK9604-40A, 118 are such as DC, AC power control and signal interface circuit with low on-resistance and low input capacitance. It provides a relatively low on- resistance of 8.2 Ohms typically. This makes it ideal for power applications that require efficient operation and low power consumption, such as in motor control, photovoltaic cells, and consumer devices.
The key features of the BUK9604-40A, 118 include low input capacitance, low on resistance, low leakage current, and low voltage drop when switched on. The drain-gate voltage (VGS) is designed to deliver an optimal amount of current, preventing the device from being damaged even when the voltage applied is fluctuating significantly. The low-power drain-gate voltage is also designed to minimize the need for external decoupling capacitor or additional power sources.
The working principle of the BUK9604-40A, 118 is based on impedance control technology. It controls the flow of current using a gate-drain voltage that is applied to a Silicon carbide HEXFET transistor. Current flows from the drain-gate junction when the voltage applied is greater than the threshold voltage. This technology helps to improve efficiency by reducing power dissipation.
The introduction of the BUK9604-40A, 118 has revolutionized the way digital circuits are designed. This FET transistor has enabled engineers to improve the performance of existing circuits by providing a cost effective solution with less complexity. It is an ideal choice for applications where input capacitance and low on-resistance are critical parameters.
In conclusion, the BUK9604-40A, 118 is a single FET transistor capable of switching and amplifying a signal. Its low on-resistance and low input capacitance make it suitable for small and medium power applications. This makes it an ideal choice for engineers looking for a cost efficient and reliable power switch solution.
The specific data is subject to PDF, and the above content is for reference
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