BUK9C10-55BIT/A,11

Gate Charge (Qg) (Max) @ Vgs:	51nC @ 5V
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package:	D2PAK-7
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	194W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4667pF @ 25V
Vgs (Max):	±15V
Series:	TrenchPLUS
Vgs(th) (Max) @ Id:	2V @ 1mA
Rds On (Max) @ Id, Vgs:	9 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Ta)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Last Time Buy

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The BUK9C10-55BIT/A,11 is a single P-channel depletion Mode Polsihed Gate advanced Power MOSFET from NXP Semiconductors. This MOSFET is optimized for low-side switch applications, such as DC/DC converters, motor control, switch mode power supplies, motor drivers, and automotive systems. The device has a 40V drain-source voltage (VDSS) capability, 25mohm RDS(ON), 100A continuous current (ID), and high thermal performance.The BUK9C10-55BIT/A,11 is an enhancement-mode power MOSFET manufactured by NXP Semiconductors. It is a single gate, N-type vertical DMOS transistor constructed on monolithic, planar technology. The device has an integrated Gate structure and is ideally suited for applications where high switching speed, fast switching, and low-on resistance are required.The working principle of the BUK9C10-55BIT/A,11 involves several steps. First, the MOSFET is low-side driven by a signal current through the gate, connecting the gate and the source. This current force then sets up an electric field, which reduces the MOSFET threshold voltage, resulting in a depletion mode for the gate. During this mode, the depletion gate width increases with further source-to-gate depletion layer and the drain-to-source resistance (RDS ON ) decreases, thus achieving low ON-state resistance.The polsihed-gate structure also helps reduce ON-state resistance. The level of polishing is optimized for each individual device and therefore reduces the number of parasitic resistances, which influences the transistor’s switching speeds. This allows the BUK9C10-55BIT/A,11 to achieve a concentration of current densities which leads to reduced switching times and improves the overall efficiency of the device.The applications of the BUK9C10-55BIT/A,11 MOSFET include DC/DC converters, switch mode power supplies, motor control, automotive systems, and motor drivers. The device has several characteristics which make it suitable for these applications. Its high thermalconductivity and excellent power dissipations are two features which allow the device to provide a great deal of power control. Also, due to its low-side switch capability, the device operates with high frequency and low-side drivers, which allows for the effective operation of higher-powered motors. Furthermore, its high current density and low-on resistance make it particularly well-suited for DC/DC conversion of higher voltages.In conclusion, the BUK9C10-55BIT/A,11 is a single P-channel depletion mode Polsihed Gate advanced Power MOSFET from NXP Semiconductors. This MOSFET is designed for low-side switch applications, such as DC/DC converters, switch mode power supplies, motor control, automotive systems and motor drivers. Its working principle involves the formation of a depletion mode in the gate, leading to a reduction of MOSFET threshold voltage, resulting in low-on resistance. This device is suitable for its applications due to its high thermalconductivity and power dissipations, as well as its low-side switch capability and high current density.

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