BUK9K52-60E,115 Allicdata Electronics
Allicdata Part #:

1727-7273-2-ND

Manufacturer Part#:

BUK9K52-60E,115

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 60V 16A LFPAK56D
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 16A 32W Surfac...
DataSheet: BUK9K52-60E,115 datasheetBUK9K52-60E,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.25444
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 49 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Power - Max: 32W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Description

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The BUK9K52-60E,115 are an array of N-channel enhancement mode MOSFETs, which can be used for high side or low side switching applications. Moreover, these components also offer an integrated diode for protection against flyback reversal. These arrays are designed specifically for automotive and industrial applications, such as motor controls, solenoid control, Automotive-Body Control Modules (BCMs) and instrumentation rail systems. Each array is rated at a maximum drain-source voltage of 900V, a maximum current of 15A and a maximum power dissipation of 135W at an ambient temperature of 25°C.The basic working principle of BUK9K52-60E,115 is that it allows current to flow through their channel when the gate is forward biased (positive). The drain-source path is blocked when the gate is reverse biased (negative). This makes it suitable for high side or low side switching applications, as the device can be turned on or off by controlling the gate voltage. With its integrated diode, the device can also dissipate voltage flyback reversals which may occur during the switching process. These N-channel enhancement mode components offer a fast switching speed and a low on-resistance. Moreover, their integrated diode provides a reverse leakage current of up to 4mA and a breakdown voltage of 60V. Also, the BUK9K52-60E,115 are housed in a wide range of packages, including SOT-223, SOT-89 and TO-220. The BUK9K52-60E,115 are also designed for automotive applications, as they are qualified according to the AEC-Q100 standard for temperature cycling and residual stress effects. Furthermore, these components are tested for compliance with automotive EMC standards and can also withstand high vibration loads, making them suitable for automotive applications. Overall, the BUK9K52-60E,115 are an array of N-channel enhancement mode MOSFETs which is designed for automotive and industrial applications, such as motor controls, solenoid control, Automotive-Body Control Modules (BCMs) and instrumentation rail systems. With its integrated diode these components can withstand voltage flyback reversals, making them suitable for high side or low side switching applications. Moreover, these are also qualified according to the AEC-Q100 standard and can withstand high vibration loads, making them suitable for automotive applications.

The specific data is subject to PDF, and the above content is for reference

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