BUK9M17-30EX Discrete Semiconductor Products

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The BUK9M17-30EX n-channel enhancement mode Field Effect Transistor (FET) is a robust high-speed switching device with low on-resistance and low gate charge. It can be utilized in a variety of circuits in a broad range of applications. The BUK9M17-30EX uses an optimized design process to reduce on-resistance variation when subject to temperature and voltage fluctuations. It is suitable for high-speed switching and Logic Level switching applications in automotive, communications, consumer, industrial, and computing systems.

The BUK9M17-30EX is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). MOSFETs are three-terminal devices that use an electric field to control the flow of current within a circuit. Unlike conventional transistors, MOSFETs have no extra gate current and have a high-input impedance. This makes them well-suited for digital switching applications where device characteristics need to be maintained over wide ranges of temperature and voltage. The BUK9M17-30EX features a low drain-source on-resistance of 17mΩ and a high-speed switching time of 30ns.

At the heart of a MOSFET is the gate. In an enhancement mode device, the gate terminal is normally held at a negative potential with respect to the source terminal. This negative potential prevents current flow between the drain and the source until the voltage applied to the gate terminal is sufficient to “turn on” the device. This is known as the threshold voltage. The equation for calculating the threshold voltage of a BUK9M17-30EX is V_th = 0.2V + 2.37V – 0.17V, where each voltage is dependent on the temperature and voltage conditions of the device.

In the on-state, the BUK9M17-30EX exhibits a low drain-source resistance of 17mΩ. This is beneficial for reducing power loss in the device as well as for improving switching times. The BUK9M17-30EX also features a total gate charge of 15nC, which is low enough to allow for high-speed switching.

The BUK9M17-30EX is suited for applications requiring high-speed switching and precision control of current. Some examples include power switching, power drive relays, ringing circuits, and DC-DC converters. It has been tested in automotive environments and has been proven to be able to withstand extreme temperature and shock conditions.

The BUK9M17-30EX demonstrates a number of advantages over conventional n-channel and p-channel MOSFETs, such as higher mobility, improved low on-resistance, low gate charge, and high-speed switching. It provides an optimum solution for high-performance switching applications in automotive, communication, consumer, industrial, and computing systems.

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