BUK9Y14-80E,115 Discrete Semiconductor Products

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The BUK9Y14-80E,115 is a single N-Channel Enhancement Mode Field-effect transistor (FET). It is manufactured by the NXP semiconductors, allowing it to have great performance compared to other similar ones in the market. This device is designed to handle especially high power requirements and offers a wide range of current and voltage capacities, making it suitable for a variety of applications. It is also capable of operating in temperatures up to +175 °C.

In addition to its temperature sustainability, the BUK9Y14-80E,115 can handle high frequency operations and has a low input capacitance. This makes it particularly suitable for use in switching applications, such as motor drives and high-frequency output stages. Its ESD (Electrostatic Discharge) rating is sufficiently high and makes it well suited for use in industrial or military applications, where it can accommodate a wide variety of power requirements.

The BUK9Y14-80E,115 has an input voltage of 8V and is able to take in up to 70A of current. It has an output voltage of 11.5V and is able to provide up to 50A of current. This allows it to accommodate a wide variety of power requirements. The drain-source on-resistance of the transistor is approximately 0.83 Ohms and its VGS (gate-source voltage) threshold voltage is 6V.

The BUK9Y14-80E,115 is typically used in motor drives, audio amplifiers, high-frequency output stages, and switching applications. It is also a popular choice for power applications such as power rails and high-current converters. In applications involving power management, the BUK9Y14-80E,115 can be used to provide a buffer between an unregulated voltage source (such as USB) and a regulated output voltage which is then used to power a device.

The working principle of this type of transistor is the same as any other FET: voltage is applied to the gate terminal, which creates an electric field. This electric field then modulates the current that can be allowed to flow across the drain and source terminals. The transistors will thus be able to control the current flow between the drain and source terminals depending on the voltage applied to the gate terminal. The BUK9Y14-80E,115 can be used to quickly pull higher currents.

In conclusion, the BUK9Y14-80E,115 is a single N-Channel Enhancement Mode Field-effect transistor (FET) manufactured by NXP semiconductors. It is designed to handle especially high power requirements and offers a wide range of current and voltage capacities, making it suitable for a variety of applications such as motor drives, audio amplifiers, and high-frequency output stages. It is also popular for its use in power management as a buffer between an unregulated voltage source and a regulated output voltage. The working principle of the BUK9Y14-80E,115 is the same as any other FET, voltage is applied to the gate terminal, which creates an electric field, modulating the current that can be allowed to flow across the drain and source terminals.

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