Allicdata Part #: | 568-5728-5-ND |
Manufacturer Part#: |
BUK9510-100B,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 75A TO220AB |
More Detail: | N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | BUK9510-100B,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9.7 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 5V |
Vgs (Max): | ±15V |
Input Capacitance (Ciss) (Max) @ Vds: | 11045pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK9510-100B,127 is a single N-channel Enhancement Mode Field Effect Transistor (MOSFET). It is unique compared to other transistors because of its built-in gate, which provides high input impedance and low input capacitance, thus making it an ideal switch for digital CMOS circuits. This type of MOSFET is mainly used in analog and digital circuits for switching, voltage regulating, and current limiting applications, making them very versatile.
The BUK9510-100B,127 has a voltage rating of ±15V, meaning that it can handle voltages in the range of -15V to +15V. The MOSFET also has a low gate-source capacitance of 5.2pF. This enables it to accurately switch signals at high frequency, making it a great choice for high-frequency switching applications. Additionally, the transistor has a low on-resistive of 0.06 ohm; this means that when it is turned on, it provides a low leakage path, resulting in very low power loss.
The maximum current rating of this MOSFET is also exceptional, with a blocking voltage (VGS) of 100V and a drain current (I DS) of up to 33A. This makes it suitable for applications that require high power transfer. The gate threshold voltage is relatively low at 1.3V, meaning that the transistor can be easily activated by low voltage signals.
The BUK9510-100B,127 is a very powerful and versatile transistor for a variety of applications. It is commonly used in motor controls, instrumentation, power supply regulation, switching circuits, voltage regulation, and other related applications due to its low power loss, high current handling capacity, and low gate-source capacitance. Additionally, it can also be used in logic circuits as a switch due to its low gate-source voltage.
The working principle of the BUK9510-100B,127 is quite simple. It works on the premise that when a positive voltage is applied to the gate of the transistor, its current will be increased, thus allowing it to act as a switch. To turn the transistor off, the voltage on the gate has to be brought back to zero or below, which in turn reduces the current flow. As mentioned earlier, the gate threshold voltage of the transistor is low, meaning that it can be easily activated by low voltage signals.
In conclusion, the BUK9510-100B,127 is an excellent single N-channel Enhancement Mode Field Effect Transistor (MOSFET). It offers good power handling capabilities, low gate-source capacitance, and low on-resistive, making it well-suited for high-frequency switching applications. Additionally, its low gate-threshold voltage allows it to be easily activated by low voltage signals, making it suitable for logic circuits as a switch.
The specific data is subject to PDF, and the above content is for reference
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