BUK9611-80E,118

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BUK9611-80E,118 is a type of transistor referred to as a field effect transistor (FET). FETs are a type of transistor that operates on the concept of field effect. This principle means the voltage levels of a gate electrode can be used to control the current between source and drain electrodes. There are two types of FETs, the junction FET (JFET) and the metal oxide semiconductor FET (MOSFET). The BUK9611-80E, 118 is classified as a MOSFET, making it a type of single FET. Single FETs have only one substrate, or base layer, for their transistors, making them limited in their operating range and requiring more complex circuitry to control them. MOSFETs are one of the most common FET types and are used in a variety of applications, such as amplifying and switching systems. The BUK9611-80E,118 is specifically designed for applications such as automotive electronics, radio frequency (RF) amplifiers, resonators, and oscillators. Its operation and characteristics have been tailored to meet the requirements of these types of applications. For example, its low capacitance lends itself to RF applications while its low thermal resistance is ideal for automotive electronics. MOSFETs in general operate similarly to JFETs, but with a few key differences. Whereas JFETs allow for a certain amount of current to flow between the source and drain electrodes without any external influence, MOSFETs do not. Instead, a MOSFET requires a voltage from an external source to be applied to the gate electrode in order to allow current to flow between the source and drain electrodes. The strength of the voltage applied to the gate determines the amount of current that is allowed to flow, resulting in the control of the on/off state of the transistor. The most common type of MOSFET is the enhancement type, which requires the gate voltage to be higher than the source voltage in order to turn the transistor on. The BUK9611-80E,118 is an enhancement type MOSFET, with a rated drain-source breakdown voltage of 800V, a maximum drain-source voltage of 450V, and a gate-source voltage of 20V. In addition, it has a maximum drain current of 15A and a drain-source on-state resistance of 0.05 ohms. Because of its rated characteristics and low on-state resistance, the BUK9611-80E,118 is ideal for use in automotive switchmode power supplies, RF amplifiers, and other related applications. It is especially useful for applications that require high voltage and current handling capability in a small package, such as automotive electronics. In addition, its low thermal resistance makes it suitable for use in high temperature applications. In conclusion, the BUK9611-80E,118 is an excellent choice for use in applications such as automotive electronics, RF amplifiers, and switchmode power supplies. Its low thermal resistance and its ability to handle high voltage and current make it well-suited for these types of applications. Its gate voltage control also makes it easy to control its switching state, making it perfect for use in a variety of different circuits.

The specific data is subject to PDF, and the above content is for reference