Allicdata Part #: | 568-9775-5-ND |
Manufacturer Part#: |
BUK95150-55A,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 55V 13A TO220AB |
More Detail: | N-Channel 55V 13A (Tc) 53W (Tc) Through Hole TO-22... |
DataSheet: | BUK95150-55A,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 137 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 339pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 53W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK95150-55A is a single voltage enhancement mode Field Effect Transistor (FET) based on the submicron MOSFET process. It has been especially designed for use in Discrete, Low-Voltage, and RF applications.
BUK95150-55A has a special sensitivity to gate overdrive that controls its source-drain current (ID) without disruption of the external circuit. It can be used to construct robust and powerful switching circuits, which may be more efficient than the more common transistor structures.
The main features of this FET include:
- High drain-source breakdown voltage of 55V
- Low-on resistance (RDS(ON)) of 150 mΩ
- Good linearity characteristics
- High performance and reduced power consumption
- Low gate charge
BUK95150-55A is a three-terminal off-state device. It is in a voltage-controlled normally off state, meaning that the drain-source current is turned off when no voltage is applied between the gate and source terminals. When voltage is applied between the gate and source terminals, the FET is switched on, allowing a conduction between the source and drain terminals.
The main applications for BUK95150-55A include:
- Switching, control, and protection circuits
- Portable devices
- Wireless applications
- Server and laptop computers
- Power conversion circuits
- Telecommunications equipment
BUK95150-55A is a standard enhancement mode MOSFET and is best suited for new designs, requiring a fast device with low gate charge with improved matching and low-voltage operation. It is specifically designed to minimize the effects of power information in the circuit.
Due to its low-voltage operation, BUK95150-55A can provide an excellent increase in power efficiency and reduce the overall power consumption of a system. In addition, its operating temperature range of -55°C to 125°C makes it suitable for operation in a variety of environments.
BUK95150-55A is suitable for circuits in which fast switching and low-voltage operation are of the utmost importance. It offers low gate charge, excellent matching, and high efficiency, thus making it a top choice for many applications. As such, it is an excellent choice for designers who are looking for a cost-effective and reliable solution for their projects.
The specific data is subject to PDF, and the above content is for reference
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