BUK9660-100A,118

The BUK9660-100A,118 is a single N-Channel enhancement mode Field Effect Transistor (FET) from ROHM Semiconductor. It uses an advanced low voltage process technology which gives it wide VDS range and a low on-resistance of 2.6m OHMs. It is ideal for high power and battery switch applications in automotive and industrial applications.

The BUK9660-100A,118 has a drain current rating of 30A, a drain source voltage rating of 100V and is capable of withstanding a maximum gate voltage of 20V. It also has a high speed switching performance with a gate charge of 3nC and a fast on-time of 15ns. Its small SOT-223 package size makes it perfect for use in limited space applications.

The BUK9660-100A,118 operates using an N-channel MOSFET having three layers which act as its gate, drain, and source. The gate is responsible for controlling the flow of current between the drain and source. When a positive voltage is applied to the gate, the channel is turned “on” and allows electrical current to flow between the source and drain. When the gate voltage is turned off, the flow of electrical current is stopped.

This transistor is most often used in a range of circuit applications including power supplies, motor control, switching, level shifting, and signal amplification. Due to its low on-resistance and wide VDS range, it is suitable for applications where high currents need to be switched with speed and accuracy. Additionally, its SOT-223 package size makes it ideal for applications where space is limited.

The BUK9660-100A,118 is a versatile single N-Channel MOSFET that can meet the needs of a range of high power and battery switch applications. Its small package size and advanced low voltage process technology make it an excellent choice for value-oriented applications that require speed and accuracy.