BUK962R8-60E,118 Allicdata Electronics
Allicdata Part #:

1727-1096-2-ND

Manufacturer Part#:

BUK962R8-60E,118

Price: $ 0.99
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 120A D2PAK
More Detail: N-Channel 60V 120A (Tc) 324W (Tc) Surface Mount D2...
DataSheet: BUK962R8-60E,118 datasheetBUK962R8-60E,118 Datasheet/PDF
Quantity: 4800
800 +: $ 0.91004
Stock 4800Can Ship Immediately
$ 0.99
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 324W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 5V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK962R8-60E,118 is a component device in the family of transistors and Field-Effect Transistors (FETs) known as MOSFETs, or metal-oxide semiconductor FETs. This component device is a single MOSFET, operating with an on-chip logic-level voltage option (Vth or gate threshold). Being an enhancement-type component device, it has no body diode character and features low on-resistance. It is ideal for applications such as transistor-level switching in highly integrated systems. The component device is available in single and multiple devices in an S0-8 package.

The BUK962R8-60E,118 component device consists of a single source drain which is the main component of a MOSFET. This component device is designed using the n-channel depletion mode of operation. This allows the component device to operate at lower current values and does not require additional bias signals to operate. The component device also features a gate threshold voltage of -60 volts, allowing for a wide voltage range of operation. The component device has a high switching speed and low on-resistance rating of 8.1 ohms.

The application field of the BUK962R8-60E,118 component device is ideal for switching both digital and analog signals. It has been designed for low power control systems, power distribution and DC/DC converters. It is highly suitable in applications where inductive loads, capacitive loads and ICs must be switched with minimum power losses and high precision. This component device can also be used with analog signals in applications such as signal conditioning and signal amplification.

The working principle of the BUK962R8-60E,118 component device operates on the principle of source-to-drain current conduction. The component device works by applying a signal at the gate terminal when it needs to be in a “ON” condition. This triggers the component device in order to provide a path for the electrons (carriers of electrical current) to flow between the source and drain terminal. This creates an electron flow from source to drain which is correlated to the signal applied at the gate terminal. The component device effectively amplifies and conditions the signal as it passes through between the source and drain terminal.

In conclusion, the BUK962R8-60E,118 is a component device belonging to the family of transistors, specifically MOSFETs. It is an ideal component device for switching both digital and analog signals with applications in power distribution, DC/DC converters and signal conditioning. The component device works on the principle of source-to-drain current conduction, where a signal at the gate terminal triggers the component device to allow electrons to flow between the source and the drain terminal. This in return amplifies and conditions the signal as it passes through.

The specific data is subject to PDF, and the above content is for reference

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