BUK9M12-60EX Allicdata Electronics
Allicdata Part #:

1727-2569-2-ND

Manufacturer Part#:

BUK9M12-60EX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 54A LFPAK
More Detail: N-Channel 60V 54A (Tc) 79W (Tc) Surface Mount LFPA...
DataSheet: BUK9M12-60EX datasheetBUK9M12-60EX Datasheet/PDF
Quantity: 4500
Stock 4500Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2769pF @ 25V
Vgs (Max): ±10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK9M12-60EX Application Field and Working Principle

The BUK9M12-60EX is a vertical N-Channel MOSFETs manufactured by Infineon. It has been developed for high frequency signal switching applications, such as RF amplifiers, cellular base stations and FAX communication.

Features of BUK9M12-60EX

  • High-speed switching with a maximum of 50V blocking voltage
  • Very low on-state resistance at 1.0Ω
  • Excellent scalability of ON/OFF ratio
  • RoHS compliant and Green standards

Typical Applications for the BUK9M12-60EX

  • High-speed switches in RF PA and LNA
  • High-frequency signal switching applications
  • Base station applications
  • Audio amplifiers
  • Power supplies and Voltage regulators
  • Consumer electronics

Working Principle of the BUK9M12-60EX

The BUK9M12-60EX is a vertical N-Channel MOSFET. It consists of an extremely thin silicon dioxide layer between a source and a drain terminal. This layer is also called a gate oxide layer. A voltage applied to the gate terminal of the transistor controls the flow of current from source to drain. In other words, when a positive voltage is applied to the gate, current flows from the source to the drain and vice-versa.

When in the on state, the BUK9M12-60EX offers high-speed switching with a maximum of 50V blocking voltage and a very low on-state resistance at 1.0Ω. This provides excellent scalability of ON/OFF ratio making it perfect for applications in high-frequency signal switching.

In addition to this, the BUK9M12-60EX is compliant with RoHS and Green standards and has been designed with full consideration for environmental protection. This makes it ideal for use in a wide range of consumer electronic devices.

Conclusion

The BUK9M12-60EX is a vertical N-Channel MOSFET designed by Infineon and it has been developed for high frequency signal switching applications. It offers high-speed switching with a maximum of 50V blocking voltage and a very low on-state resistance at 1.0Ω, as well as excellent scalability of ON/OFF ratio. The BUK9M12-60EX is RoHS compliant and Green standards compliant, making it a perfect choice for high-frequency signal switching applications in consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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