| Allicdata Part #: | 1727-2569-2-ND |
| Manufacturer Part#: |
BUK9M12-60EX |
| Price: | $ 0.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 60V 54A LFPAK |
| More Detail: | N-Channel 60V 54A (Tc) 79W (Tc) Surface Mount LFPA... |
| DataSheet: | BUK9M12-60EX Datasheet/PDF |
| Quantity: | 4500 |
| 1 +: | $ 0.22000 |
| 10 +: | $ 0.21340 |
| 100 +: | $ 0.20900 |
| 1000 +: | $ 0.20460 |
| 10000 +: | $ 0.19800 |
| Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
| Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
| Supplier Device Package: | LFPAK33 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 79W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2769pF @ 25V |
| Vgs (Max): | ±10V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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BUK9M12-60EX Application Field and Working Principle
The BUK9M12-60EX is a vertical N-Channel MOSFETs manufactured by Infineon. It has been developed for high frequency signal switching applications, such as RF amplifiers, cellular base stations and FAX communication.
Features of BUK9M12-60EX
- High-speed switching with a maximum of 50V blocking voltage
- Very low on-state resistance at 1.0Ω
- Excellent scalability of ON/OFF ratio
- RoHS compliant and Green standards
Typical Applications for the BUK9M12-60EX
- High-speed switches in RF PA and LNA
- High-frequency signal switching applications
- Base station applications
- Audio amplifiers
- Power supplies and Voltage regulators
- Consumer electronics
Working Principle of the BUK9M12-60EX
The BUK9M12-60EX is a vertical N-Channel MOSFET. It consists of an extremely thin silicon dioxide layer between a source and a drain terminal. This layer is also called a gate oxide layer. A voltage applied to the gate terminal of the transistor controls the flow of current from source to drain. In other words, when a positive voltage is applied to the gate, current flows from the source to the drain and vice-versa.
When in the on state, the BUK9M12-60EX offers high-speed switching with a maximum of 50V blocking voltage and a very low on-state resistance at 1.0Ω. This provides excellent scalability of ON/OFF ratio making it perfect for applications in high-frequency signal switching.
In addition to this, the BUK9M12-60EX is compliant with RoHS and Green standards and has been designed with full consideration for environmental protection. This makes it ideal for use in a wide range of consumer electronic devices.
Conclusion
The BUK9M12-60EX is a vertical N-Channel MOSFET designed by Infineon and it has been developed for high frequency signal switching applications. It offers high-speed switching with a maximum of 50V blocking voltage and a very low on-state resistance at 1.0Ω, as well as excellent scalability of ON/OFF ratio. The BUK9M12-60EX is RoHS compliant and Green standards compliant, making it a perfect choice for high-frequency signal switching applications in consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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BUK9M12-60EX Datasheet/PDF