Allicdata Part #: | 1727-2569-2-ND |
Manufacturer Part#: |
BUK9M12-60EX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 54A LFPAK |
More Detail: | N-Channel 60V 54A (Tc) 79W (Tc) Surface Mount LFPA... |
DataSheet: | BUK9M12-60EX Datasheet/PDF |
Quantity: | 4500 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2769pF @ 25V |
Vgs (Max): | ±10V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BUK9M12-60EX Application Field and Working Principle
The BUK9M12-60EX is a vertical N-Channel MOSFETs manufactured by Infineon. It has been developed for high frequency signal switching applications, such as RF amplifiers, cellular base stations and FAX communication.
Features of BUK9M12-60EX
- High-speed switching with a maximum of 50V blocking voltage
- Very low on-state resistance at 1.0Ω
- Excellent scalability of ON/OFF ratio
- RoHS compliant and Green standards
Typical Applications for the BUK9M12-60EX
- High-speed switches in RF PA and LNA
- High-frequency signal switching applications
- Base station applications
- Audio amplifiers
- Power supplies and Voltage regulators
- Consumer electronics
Working Principle of the BUK9M12-60EX
The BUK9M12-60EX is a vertical N-Channel MOSFET. It consists of an extremely thin silicon dioxide layer between a source and a drain terminal. This layer is also called a gate oxide layer. A voltage applied to the gate terminal of the transistor controls the flow of current from source to drain. In other words, when a positive voltage is applied to the gate, current flows from the source to the drain and vice-versa.
When in the on state, the BUK9M12-60EX offers high-speed switching with a maximum of 50V blocking voltage and a very low on-state resistance at 1.0Ω. This provides excellent scalability of ON/OFF ratio making it perfect for applications in high-frequency signal switching.
In addition to this, the BUK9M12-60EX is compliant with RoHS and Green standards and has been designed with full consideration for environmental protection. This makes it ideal for use in a wide range of consumer electronic devices.
Conclusion
The BUK9M12-60EX is a vertical N-Channel MOSFET designed by Infineon and it has been developed for high frequency signal switching applications. It offers high-speed switching with a maximum of 50V blocking voltage and a very low on-state resistance at 1.0Ω, as well as excellent scalability of ON/OFF ratio. The BUK9M12-60EX is RoHS compliant and Green standards compliant, making it a perfect choice for high-frequency signal switching applications in consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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