BUK9K18-40E,115 Allicdata Electronics

BUK9K18-40E,115 Discrete Semiconductor Products

Allicdata Part #:

1727-7269-2-ND

Manufacturer Part#:

BUK9K18-40E,115

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 40V 30A LFPAK56D
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 30A 38W Surfac...
DataSheet: BUK9K18-40E,115 datasheetBUK9K18-40E,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.28192
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V
Power - Max: 38W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D
Description

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The BUK9K18-40E,115 is a type of transistor array from a family of MOSFETs, Field Effect Transistors. These transistors are designed to offer low drag, low power dissipation and fast switching characteristics. The BUK9K18-40E,115 is designed for use in a wide variety of applications, ranging from radio frequency (RF) and microwave devices to power electronics and automotive systems. In addition, these transistors offer excellent performance when operating in both wide bandgap and narrow bandgap applications.

The working principle of the BUK9K18-40E,115 transistor array is based on the concepts of field effect transistors. The transistor array is comprised of a series of MOSFET cells, which are connected in a parallel configuration. Each cell is comprised of a source, a drain and a gate. The gate is the control element of the transistor and is responsible for the amount of current that can flow through the transistor. When the gate voltage is increased, electrons are allowed to flow through the source to the drain. Conversely, when the gate voltage is decreased, the electric current is decreased.

The MOSFET transistors used in the BUK9K18-40E,115 array offer several advantages over other types of transistors. Firstly, they are capable of producing higher switching speeds than other transistors. This makes them suitable for high speed applications such as radio frequency systems. Secondly, they are capable of providing low power levels, making them suitable for power electronics applications. Thirdly, they provide high immunity to noise and radiation, making them suitable for applications in sensitive areas.

The BUK9K18-40E,115 transistor array is used in a variety of applications in both consumer electronics and industrial systems. In consumer electronics, these transistors are used in power supply systems, home theater systems, DVD players and other household appliances. In industrial systems, these transistors are used in power systems, radio communication systems, remote control systems and medical equipment. Additionally, the BUK9K18-40E,115 array can be used in military and aerospace applications such as radar systems and satellites.

In conclusion, the BUK9K18-40E,115 transistor array is an excellent choice for a range of applications due to its low energy consumption, fast switching speeds and impressive noise immunity levels. The transistors in the array can be easily switched to meet the needs of the application. Furthermore, the BUK9K18-40E,115 array offers an excellent solution for power electronics, radio frequency and microwave, automotive and general applications.

The specific data is subject to PDF, and the above content is for reference

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