Allicdata Part #: | 1727-7274-2-ND |
Manufacturer Part#: |
BUK9K6R2-40E,115 |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 40V 40A LFPAK56D |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 40A 68W Surfac... |
DataSheet: | BUK9K6R2-40E,115 Datasheet/PDF |
Quantity: | 4500 |
1500 +: | $ 0.41297 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 40A |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 35.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3281pF @ 25V |
Power - Max: | 68W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-1205, 8-LFPAK56 |
Supplier Device Package: | LFPAK56D |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BUK9K6R2-40E,115 is a type of transistor array that belongs to the field of transistors, specifically FETs (field-effect transistors) and MOSFETs (metal-oxide-semiconductor field-effect transistors). It is a four-channel, single N-channel enhancement mode MOSFET array.
MOSFETs are transistors that make use of an electric field to control the behaviour of a flow of electrons through a gate within the transistor. As no current is required to pass through the gate in order to control the flow of electrons through the transistor, it makes the MOSFET a particularly efficient type of transistor in terms of energy consumption. The BUK9K6R2-40E,115 is designed with this low-power consumption in mind, and its low threshold voltage ensures that it operates at the lowest possible power level.
The four-channel design of the BUK9K6R2-40E,115 is particularly useful in applications that require multiple switching operations to be performed simultaneously. This includes data transmission over networks, in which the four-channel design allows for the transmission of multiple bits at once, increasing the overall data transmission speed. Additionally, the single N-channel enhancement mode of the BUK9K6R2-40E,115 makes it an ideal choice for applications which require the positive number of input signals to control the output.
The BUK9K6R2-40E,115 is well suited for many different applications. As such, it is commonly used in digital circuit switching devices, analog motor drives, and power management systems. The BUK9K6R2-40E,115 is also widely used in complex switching systems, such as in various automotive applications, including powertrains and braking systems. In addition, it is often employed in telecommunications systems, specifically in the switching of digital signals between networks.
The working principle of the BUK9K6R2-40E,115 is to use the voltage difference between the gate and the source, which creates an electric field. This electric field attracts a stream of conductors, which can be controlled using the electric field strength to open or close the transistor, controlling the flow of current through the device. This method of switching is known as field-effect, and is what gives MOSFETs their low power consumption.
Overall, the BUK9K6R2-40E,115 is a versatile and reliable transistor array that is used in a variety of applications, from data transmission to motor drives. Its four-channel design and low power requirement makes it ideal for such uses, and its versatile working principle ensures that it is suitable for a wide range of electronic devices.
The specific data is subject to PDF, and the above content is for reference
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