Allicdata Part #: | BUK9MFF-65PSS,518-ND |
Manufacturer Part#: |
BUK9MFF-65PSS,518 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | 9605 AUTO TRENCH PLUS |
More Detail: | Mosfet Array 2 N-Channel (Dual) 65V 13.6A (Tc) 4.7... |
DataSheet: | BUK9MFF-65PSS,518 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchPLUS |
Part Status: | Last Time Buy |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 65V |
Current - Continuous Drain (Id) @ 25°C: | 13.6A (Tc) |
Rds On (Max) @ Id, Vgs: | 12.3 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 40.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 3052pF @ 25V |
Power - Max: | 4.75W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 20-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 20-SO |
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The BUK9MFF-65PSS 518 is a single-bipolar transistor (BJT) device from Infineon, the leading investment and technology amongst semiconductor companies. This device is best suited for use in applications that require high switching speed or high-frequency operations. In addition, this device is able to operate with high reliability and is easy to mount, allowing users to integrate it into their systems with ease. In this article, we will look into the application of BUK9MFF-65PSS 518 and its working principles.
Application
The BUK9MFF-65PSS 518 is best suited for switching circuits, where highly accurate and fast responses are required. The device comprises several different components which make it suitable for applications such as the following:
- High-speed switching circuits
- High-frequency switching circuits
- Communication circuits
- RF (radio frequency) applications
- Motor control
- Inverters
- Solar inverters
- Lighting applications
The device is also suitable for applications where low power consumption and high efficiency is required. Additionally, the device is robust in applications such as quick-starting motor, ignition control and powerful motor motion control applications.
Working Principle
BUK9MFF-65PSS 518 is a three-terminal bipolar junction transistor (BJT) device which is made up of three different doped layers in a single silicon substrate. The middle layer -- the base layer -- is lightly doped while the other two layers -- the emitter and collector layers -- are more heavily doped. The three terminals of BUK9MFF-65PSS 518 are the emitter, collector and base.
When a small forward bias voltage is applied to the base terminal, it increases the potential barrier between the base and the collector, enabling current to flow from the emitter to the collector. This current-controlling characteristics of this BJT device makes it a suitable choice for applications that require switching speed or high-frequency operations.
The power gain of BUK9MFF-65PSS 518 is relatively high, which makes it suitable for applications where a high current gain is desired. The device is also temperature stable, with a low thermal resistance. The two distinct coupling capacitances of the device -- between the emitter and collector voltage, and also between the emitter and base voltage -- enable it to be used in high-frequency applications.
Conclusion
The BUK9MFF-65PSS 518 is a single-bipolar transistor (BJT) device from Infineon that is best suited for switching circuits, high-speed switching circuits, and applications where low power consumption and high efficiency is desired. Its power gain is relatively high, making it suitable for applications where a high current gain is desired, and the two distinct coupling capacitances of the device enable it to be used in high-frequency applications. With its features and efficiency, the device has become the ideal choice for a wide range of electronic designs.
The specific data is subject to PDF, and the above content is for reference
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