BUK9637-100E,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1097-2-ND |
Manufacturer Part#: |
BUK9637-100E,118 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 31A D2PAK |
More Detail: | N-Channel 100V 31A (Tc) 96W (Tc) Surface Mount D2P... |
DataSheet: | BUK9637-100E,118 Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 0.31538 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 96W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2681pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 22.8nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9637-100E,118 Field Effect Transistor, also known as a FET or MOSFET, is a single-package discrete semiconductor that is designed to provide enhanced functionality and performance in a wide range of electronic applications. The BUK9637-100E,118 is specifically designed for use in high-frequency and high-temperature systems, and its main purpose is to amplify current or voltage signals.
The BUK9637-100E,118 is an N-channel enhancement mode MOSFET, which means that it is built on a single-substrate, allowing for a lower cost and a simpler design. The implant material used in the construction of the FET is composed of two different types of silicon, with the source and drain being mono-electrons. This means that there are no majority carrier electrons present in the device, and thus it provides very low on-state resistance.
The BUK9637-100E,118 is a discrete transistor, which means that it is used in conjunction with other components to form the building blocks of a circuit. It is often used to build amplifiers, phase shift keying circuits, and low noise circuits. It can also be employed to build logic gates and pulse width modulators.
The BUK9637-100E,118 has various features that make it suitable for a wide range of applications. It features a low breakdown voltage, low input capacitance, and an excellent junction capacitance. It also offers good resistance to electrostatic discharge (ESD) and noise. Additionally, it has the ability to handle large currents without thermal drift.
To understand how a MOSFET works, it is important to understand how electric current is transferred through it. When an electric field is applied to the gate of the transistor, an electric dipole moment is created between the source and the drain terminals of the device. This creates an electric charge barrier or “gate” between the source and the drain that prevents current from flowing through. A voltage applied to the gate allows current to flow through the MOSFET.
The BUK9637-100E,118 is designed for use in a variety of automotive, industrial, and consumer electronic applications. It is well-suited for high-power, high-impedance circuits such as motor control, audio amplification, video processing, communications, and computer designs. Additionally, the device is well-suited for use in high-temperature and high-frequency applications as it has a low threshold voltage and a low gate capacitance.
Overall, the BUK9637-100E,118 is an excellent choice for a wide range of applications. It offers excellent performance and reliability in high-temperature and high-frequency environments, as well as in low-power and low-impedance circuits. Additionally, it provides good noise immunity and resistance to electrostatic discharge.
The specific data is subject to PDF, and the above content is for reference
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