BUK964R2-60E,118 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101, TrenchMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	3.9 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	72nC @ 5V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	11380pF @ 25V
FET Feature:	--
Power Dissipation (Max):	263W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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• BUK964R2-60E, 118 application field and working principle

The BUK964R2-60E, 118 is a type of a field-effect transistor (FET). It is commonly used in integrated circuits and is used to amplify and switch electrical signals. The FET is one of the three basic forms of transistors that are used in modern electronics. It has a gate terminal, which is connected to the control, or input voltage, and is used to control current flow. The FET also has source and drain terminals, which are connected to the output and power, respectively.The BUK964R2-60E, 118 is an enhancement-mode field-effect transistor (FET). This means that the FET is turned on with an applied bias voltage. An applied positive gate-to-source voltage increases the current from source to drain. This MOSFET is often used as an amplifier in circuits, and can be used to switch currents or signals.The BUK964R2-60E, 118 is part of a larger family of field-effect transistors, called power MOSFETs. These are transistors that are specifically designed to be used in power circuity applications. Power MOSFETs are used in power switches, power converters, and power supplies because they are able to handle large amounts of current, and they are capable of switching very quickly.The BUK964R2-60E, 118 exhibits a number of features that make it suitable for use in power circuitry, including a low drain-source ON resistance, a wide operating temperature range, and a high breakdown voltage. Its ON resistance is measured in milliohms, and this is important for managing current flows. Its wide operating temperature range is useful in preventing the transistor from overheating. Its high breakdown voltage is important for preventing the transistor from being damaged by high voltages.The BUK964R2-60E, 118 is typically used in applications that require precision current management like switches and amplifiers. It can also be used in power circuitry applications such as power converters and power supplies. In power circuitry, the FET is often used as a switch, where it can be used to control power to a device. It can also be used in circuits to provide linear control of current and voltage, or to protect circuits from damage due to overload or short circuit.Because of its excellent features, the BUK964R2-60E, 118 is widely used in many applications, including communications systems, consumer electronics, motor control, lighting systems, and automotive systems.The working principle of the BUK964R2-60E, 118 is based on the operation of a field-effect transistor. In a MOSFET, electrons flow between two terminals, the source and drain terminals, when the gate terminal is biased with a voltage. The current flow is controlled by the magnitude of this voltage, which can be varied with a voltage divider, potentiometer, op amp, or an analog control circuit. Thus, by controlling the gate voltage, the current flow through the FET can be varied.In summary, the BUK964R2-60E, 118 is a type of an enhancement-mode field-effect transistor (FET). It is a part of a larger family of devices called power MOSFETs and is used in power switches, power converters, power supplies, and other applications. This FET has excellent features such as a low drain-source ON resistance, a wide operating temperature range, and a high breakdown voltage. Its working principle is based on controlling the gate voltage to vary the current flow between the source and drain terminals of the transistor.

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