BUK9Y3R5-40E,115

Vgs(th) (Max) @ Id:	2.1V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	167W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5137pF @ 25V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	30.2nC @ 5V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	3.6 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The BUK9Y3R5-40E,115 is a type of field effect transistor (FET) available on the market. It is a single floating channel MOSFET that has been designed with an enhanced source-drain diode. This type of transistor is used to control the level of current that flows through the transistor. It is used in a wide range of applications, such as in motor and motor control systems, power supplies, portable audio, digital circuit protection, and many more.This transistor works on the principles of transistors, which are devices used to control the flow of electrical current. The most common type of transistor is the bipolar junction transistor (BJT), which is a three-terminal device consisting of an emitter, a collector, and a base. In contrast, field effect transistors (FETs) are four-terminal devices consisting of a source, a drain, a gate, and an electrode. The BUK9Y3R5-40E,115 is a MOSFET, which stands for metal oxide semiconductor field effect transistor. MOSFETs offer higher current density compared to BJTs and lower gate capacitance for faster switching.The BUK9Y3R5-40E,115 is designed with a low on-state resistance, which allows it to be used in applications requiring high switching frequencies. The maximum junction temperature is 125°C, which ensures that the device won\'t get too hot and malfunction. Additionally, this reduced temperature allows the MOSFET to remain efficient even during high switching cycles. The maximum drain-source current of this transistor is 10.5A and its maximum breakdown voltage is 200V. The transistor is designed to be used in a wide range of applications, such as in motor and motor control systems, power supplies, portable audio, digital circuit protection, and many more. It is a popular choice for automotive applications such as power steering, fuel injection, airbags, and more. In motor control systems, the BUK9y3R53-40E,115 is used to control the currents to the motor. This transistor is used to switch the power supply on or off to the motor. When the transistor is turned on, current flows from the power supply to the motor and the motor is driven. When the transistor is turned off, no current flows to the motor and the motor stops.In power supplies, the transistor is used to regulate the current flow. It is used to increase the current through the power supply when more power is needed, and to decrease the current when less power is needed. This type of transistor is also used in portable audio devices to reduce the power consumption of the device, as well as to reduce noise.In digital circuit protection, the BUK9Y3R5-40E,115 transistor is used to protect circuits from overvoltage and short-circuit conditions. The transistor switches off the current when an overvoltage or short-circuit condition is detected, thus protecting the circuit.The BUK9Y3R5-40E,115 transistor is an essential component in many electronic devices and systems. It is a single floating channel transistor that is efficient and reliable. Its wide range of applications makes it an ideal choice for many applications.

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