BUK9840-55,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BUK9840-55,115 is a single N-channel MOSFET that operates in the Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) family. With its 25V Drain Source Voltage (VDSS) rating, 15V Gate-to-Source Voltage (VGS) rating and a continuous drain current of 402mA, this device is well-suited for a variety of applications.

MOSFETs are a type of transistor commonly used in analog and digital switching applications. They consist of a gate, source, and drain that are connected by two semiconductor layers. When a voltage is applied to the gate, the transistor will turn on or off depending on the voltage level. This allows the transistor to act as a switch, controlling the flow of current through the device.

The BUK9840-55,115\'s main application is load switching, where it is used to switch power on and off in a circuit. For example, it can be used to control the speed of a motor, or to switch devices off when they are not in use. The BUK9840-55,115 also has applications in audio and low-voltage general purpose devices.

This MOSFET is particularly useful for power-switching applications because of its high threshold voltage (VGS (th)), which is the minimum voltage required to turn the device on. The BUK9840-55,115 has a VGS (th) of -1V, meaning that it can take on large amounts of input current at low voltages. This makes it an ideal choice for applications that require high current with low voltage.

The MOSFET also has low power dissipation and excellent thermal properties, making it suitable for use in high-temperature environments. This, combined with its wide voltage range (25V to -1V) and high continuous drain current (402mA), makes the BUK9840-55,115 an ideal choice for a variety of power switching applications.

The working principle of the BUK9840-55,115 is based on the behavior of the MOS capacitor. When a voltage is applied to the gate terminal, it causes a built-in electric field to form, which modulates the stiffness of the dielectric material between the gate and the channel.This electric field creates a channel between the source and the drain, and allows electrons or holes to flow through the channel. When the voltage applied to the gate is increased, the electric field increases and the channel width decreases, allowing less current to flow through the device. Conversely, when the voltage is decreased, the electric field decreases and the channel width increases, allowing more current to flow through the device.

In summary, the BUK9840-55,115 is a single N-channel MOSFET specifically designed for use in power switching applications. With its high threshold voltage, low power dissipation, and wide voltage range, this device is ideal for applications that require high current with low voltage.

The specific data is subject to PDF, and the above content is for reference