Allicdata Part #: | 1727-2578-2-ND |
Manufacturer Part#: |
BUK9M28-80EX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 33A LFPAK |
More Detail: | N-Channel 80V 33A (Tc) 75W (Tc) Surface Mount LFPA... |
DataSheet: | BUK9M28-80EX Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 75W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2275pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 16.7nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9M28-80EX is a N-channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) that is widely used in a variety of applications. It is a type of single transistor with a drain-source voltage of 800V and a maximum drain current of 16A. This MOSFET is known for its high efficiency, low on-state resistance, and fast switching speeds.
The BUK9M28-80EX has a variety of applications. It is widely used in motor control and inductive switching, as well as in power converters and DC-DC converters. It is also frequently used in various lighting, home appliance, and automotive applications. Due to its low on-state resistance and high current, it can be used in low voltage power sources such as solar panels, fuel cells, and batteries.
The BUK9M28-80EX has a typical gate-source threshold voltage of -2V and a maximum gate-source threshold voltage of -3V. It has a maximum gate-drain voltage of 25V with a gate-drain current of 10µA. The gate charge is typically 5nC and the drain-source on-state resistance is typically 2.2mΩ.
The working principle of the BUK9M28-80EX is based on electrostatic control of the electrical conductivity of the device. It works by controlling the voltage applied to the gate, which in turn controls the current flow through the device. When a voltage is applied to the gate, a field is created in the gate region which modulates the electrical conductivity of the MOSFET and regulates the current flow.
The BUK9M28-80EX is a useful and versatile type of MOSFET with many applications. It is known for its high efficiency, low on-state resistance, and fast switching speeds, making it ideal for many different types of power regulation and control. It is also relatively affordable and can be used in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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