Allicdata Part #: | 1727-1812-2-ND |
Manufacturer Part#: |
BUK9Y59-60E,115 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V LFPAK |
More Detail: | N-Channel 60V 16.7A (Tc) 37W (Tc) Surface Mount LF... |
DataSheet: | BUK9Y59-60E,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.15100 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 715pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 52 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 16.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK9Y59-60E,115 is a single MOSFET (metal-oxide-semiconductor field-effect transistor) specifically designed by Infineon Technologies for automotive applications. It is a medium power MOSFET transistor with a maximum drain-source voltage of 60 volts and a maximum drain current of 7.5 milliamps. This MOSFET is also known as a SuperMESH Series MOSFET. As its name suggests, the BUK9Y59-60E,115 is designed to provide superior performance in high-temperature and high-voltage applications.
The main function of a MOSFET is to control the amount of current flowing through a circuit by adjusting the voltage applied across its gate and source terminals. A single MOSFET is typically used for switching applications or for controlling the speed of a motor.
The BUK9Y59-60E,115 features five electrodes against the three of a standard MOSFET. The four additional gates provide improved controllability by enabling superior thermal management and reduction of on-state losses. The increased controllability makes the BUK9Y59-60E,115 an ideal choice in applications involving large amounts of current, such as motor drivers, power converters, DC-DC converters and high frequency inverters.
The BUK9Y59-60E,115 is a unipolar MOSFET, meaning that it uses only one type of charge carriers. It works by having negative voltages applied to its gate terminal which attracts positive charges, or holes, to the channel region. The current flow is directly proportional to the applied gate voltage, which can be adjusted to control the current flow. In addition, a predetermined drain-source voltage can also be applied to further control the current flow.
The BUK9Y59-60E,115 is constructed mainly out of silicon, which gives it great performance in harsh environments. It features excellent electrostatic discharge protection, low gate-source resistance, and provides superior switching performance and high junction temperature rise in high frequency applications. The device also features a built-in thermistor, which helps protect the transistor against temperature spikes.
The BUK9Y59-60E,115 is also capable of hard switching up to 10kHz, which makes it well suited for applications that require multiple switching cycles. This makes the BUK9Y59-60E,115 an ideal choice for high frequency applications such as motor drives, power converters, DC-DC converters, and high frequency inverters.
In conclusion, the BUK9Y59-60E,115 is a single MOSFET designed specifically for automotive applications. It features five electrodes, excellent thermal management and low gate-source resistance. The device also provides superior performance in high-temperature, high-voltage, and high-frequency applications. The BUK9Y59-60E,115 is perfect for motor drivers, power converters, DC-DC converters and high frequency inverters, and is capable of hard switching up to 10kHz.
The specific data is subject to PDF, and the above content is for reference
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