BUK9E08-55B,127

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The BUK9E08-55B N-channel power MOSFET from NXP is a high-voltage, low-threshold single-channel device. It is used mainly in switch mode power supplies and DC-DC converters. The BUK9E08-55B is based on the well-known silicon carbide (SiC) MOSFET technology. The technology enables significant improvements in the efficiency, power density, and cost of designs using the device. The BUK9E08-55B can operate at an overdrive voltage of 55 V. It offers a very low on-state resistance (RDS) of 75 mΩ and a maximum on-state current of 20A. The device is rated for a maximum operating temperature of 175°C. The BUK9E08-55B comes in a surface-mount TO-263AB package.

The most common application for the BUK9E08-55B is as the main power switch in a high-efficiency switch mode power supply (SMPS) or DC-DC converter. The SiC technology it is based on enables it to operate at higher frequencies than devices based on traditional silicon-based technology, resulting in more compact and efficient designs. In particular, the device can be used in designs where faster transient response and higher power densities are required. The BUK9E08-55B can be used as a main power switch in designs operating up to 500 kHz.

The BUK9E08-55B is a voltage-controlled device, meaning that the flow of current is controlled by the voltage applied across its gate-source terminals. The device is an enhancement mode MOSFET meaning that it requires a positive voltage to be applied to the gate terminal for the device to be in its on-state, i.e., for the device to allow current to flow from the drain to the source. The gate-source voltage is known as the “gate voltage” or “gate overdrive voltage” and it is this voltage that is used to control the device. The device has a very low threshold voltage which, combined with its low on-state resistance (RDS), allows for highly efficient designs.

The BUK9E08-55B is an excellent choice for designs where high efficiency and power density are required. The low on-state resistance (RDS) of the device allows for more efficient designs while its high breakdown voltage making it suitable for high-voltage applications. Additionally, the low gate-source threshold voltage of the BUK9E08-55B makes it possible to quickly turn the device on and off, resulting in improved transient response. In summary, the BUK9E08-55B is an ideal choice for high-efficiency switch mode power supplies and DC-DC converters operating at up to 500 kHz.

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