BUK9M5R2-30EX

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BUK9M5R2-30EX application field and working principle

BUK9M5R2-30EX is a single N-Channel enhancement mode Field Effect Transistor (MOSFET) designed to offer high performance in high-side switching applications. It is a small signal MOSFET with guaranteed high side withstand voltages up to 200 V and low on -state resistance (RDS (ON)) 0.015 Ω typ. value, making it an ideal solution for power supply designs, such as DC/DC converters, low voltage FETs, and load switching applications. Its encapsulation technology further adds dielectric and thermal benefits.

The key component of Field Effect Transistors (FETs) is the Gate channel, which is separated from the current channel by an insulator. This insulating layer allows us to control the current flow between the source and drain terminals of the transistor by applying a voltage to the Gate terminal. When a positive voltage is applied to the Gate terminal, it attracts positive charge in the Gate channel, which opens up the conductive channel between the source and drain terminals.

When the voltage at the Gate is insufficient to open up the channel, no current will flow through (the transistor acts as an “open switch”). This is known as the “off-state” of the FET and is the primary reason why FETs are used to control power in applications where the power must be switched on and off quickly. The “on-state” of the FET is the condition where enough voltage is applied to the Gate to open up the conductive channel and allow current to flow from source to drain.

In the case of the BUK9M5R2-30EX, the performance of the MOSFET is further enhanced by the various features such as its “hyperFET” technology which enables a reduced gate capacitance, its Avalanche Rating which helps to reduce the risk of short circuit damage and its “low-side switch” feature which helps to improve the current handling capability of the device. As such, this FET can be used in a variety of applications such as DC/DC voltage conversion, power-supply sequencing, load switching, low-side switches and high-side switches.

In conclusion, the BUK9M5R2-30EX is an ideal single N-Channel enhancement mode Field Effect Transistor (MOSFET) for quality, high-side switching applications. It features low on-state resistance, a 200 V high-side withstanding voltage and “hyperFET” technology, “Avalanche Rating” and “low-side switch” features, allowing it to be used for various applications such as DC/DC voltage conversion, power-supply sequencing, load switching, and high-side switches.

The specific data is subject to PDF, and the above content is for reference