BUK953R5-60E,127 Allicdata Electronics
Allicdata Part #:

1727-7249-ND

Manufacturer Part#:

BUK953R5-60E,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 60V 120A TO220AB
More Detail: N-Channel 60V 120A (Tc) 293W (Tc) Through Hole TO-...
DataSheet: BUK953R5-60E,127 datasheetBUK953R5-60E,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 13490pF @ 25V
FET Feature: --
Power Dissipation (Max): 293W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The BUK953R5-60E,127 is a N-channel enhancement mode silicon field-effect transistor (FET). It is designed for power switching applications such as high speed switching, relay and solenoid driving, low and medium frequency switching, and high current switching. It is especially suitable for input and output stages of analog circuitry, and high-gain amplifiers in the intermediate frequency (IF) range. As a single transistor, it has a 150V drain-source voltage, a 20.0A continuous drain current, an ultra-low drain-source on-resistance of 0.83Ohm, and a maximum junction temperature of 150°C.

The basic operating principle of the BUK953R5-60E,127 transistor is that it acts as a controllable electrical switch. The transistor has three connections: the gate, the source and the drain. A voltage is applied to the gate to control the current between the source and the drain. When the gate is electrically charged, a current is generated and a channel is created in the transistor to enable the current to flow between the source and the drain. An externally applied voltage is required to keep the channel open and for the current to continue to flow. When the voltage is taken away, the channel closes and the current stops flowing.

The BUK953R5-60E,127 has a wide range of applications due to its excellent switching characteristics. These include switching power supplies, adjustable frequency drives, switching regulators, motor control, solar inverters and power management. It is also suitable for medical instruments, audio and video devices, and a variety of communication, networking and consumer electronic applications. Additionally, it can be used in load switches, surge suppressors, and systems with high radiation sensitivity.

The BUK953R5-60E,127 is a high-performance FET that offers excellent electrical characteristics such as low on-resistance, low input and output capacitance, and low input gate charge. It also has a rugged body and is matched to tightly control the gate thresholds of the FETs from device to device. This ensures that all the transistors in a circuit will have the same on-resistance and off-state leakage current for reliable operation.

Overall, the BUK953R5-60E,127 is a reliable and versatile power switching device with a wide range of applications from low to medium frequency switching. It offers excellent performance characteristics such as low on-resistance, low output capacitance, and low gate charge for efficient operation. Additionally, its matched gate thresholds make it well-suited for precision applications in audio and video, power management, and communication systems.

The specific data is subject to PDF, and the above content is for reference

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