
Allicdata Part #: | 568-9675-2-ND |
Manufacturer Part#: |
BUK9609-55A,118 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 55V 75A D2PAK |
More Detail: | N-Channel 55V 75A (Tc) 211W (Tc) Surface Mount D2P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 211W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4633pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BUK9609-55A 118 is a type of field effect transistor (FET), specifically a metal-oxide-semiconductor FET (MOSFET). A MOSFET is widely used for power switching or regulating applications due to its fast response, high current capacity, and its isolating feature, which allows it to be used as a switch or an amplifier. The BUK9609-55A 118 is a single type of FET, meaning that it only has one transistor inside the FET.
The BUK9609-55A 118 is a N-channel MOSFET, meaning that it has an N-type metal with a semiconductor on one side and an oxide layer on the other side. This type of FETs provide low on-resistance, which is useful in high power applications, and can handle large input voltages. Furthermore, it has a high switching speed, which makes it suitable for applications where fast switching is required.
The main application of the BUK9609-55A 118 is as an amplifier. It uses the electric field between the gate and the source to control current flow through the channel. When a positive gate voltage is applied, it will create an inversion layer between the source and the drain and current will flow from the drain to the source. Conversely, when a negative gate voltage is applied, the channel will be depleted of charge carriers and current will not be able to flow.
The BUK9609-55A 118 is also used for power switching or regulating applications. For example, it can be used in motor control, DC-DC converters, pulse width modulation (PWM) controllers and AC drivers. In these applications, the BUK9609-55A 118 is used to switch power from one circuit to another. The speed of the on and off switching is controlled by the gate voltage and can be adjusted depending on the application. Moreover, since the BUK9609-55A 118 is a low on-resistance type of MOSFET, it can be used in high power applications to improve efficiency.
The BUK9609-55A 118 is a versatile device that can be used in a variety of applications. Its fast switching speed, low on-resistance, and high current capacity make it suitable for use in power switching, motor control, and regulating. In addition, its ability to be used as an amplifier makes it useful in a number of applications, including PWM controllers and AC drivers. The BUK9609-55A 118 is suitable for use in a variety of power related applications, making it an ideal choice for many electronics projects.
The specific data is subject to PDF, and the above content is for reference
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