BUK9Y11-30B,115

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Transistors - FETs, MOSFETs - Single - BUK9Y11-30B,115 Application Field and Working Principle

The BUK9Y11-30B,115 is a type of N-channel FET power field effect transistor (FET) produced by Infineon Technologies, distributed mainly in Europe and America. It is categorized as a single type FET and is designed to be used in audio applications and in electrical systems.

The main features of the BUK9Y11-30B,115 are its high-current carrying capability, low noise operation and good thermal performance. It has a low on-resistance and can handle a peak drain voltage of up to 90 volts. The transistors have a typical static drain-source breakdown voltage of 115 volts and offer excellent switching speed performance with a maximum drain current of 11 A.

The BUK9Y11-30B,115 is commonly used in high- current power applications, such as industrial motor drives, amplifier stages and DC-DC converters. It is also used in signal conditioning stages, audio output amplifiers and voltage controls. The transistor can be efficiently used with low input voltages, as it has a low on- resistance and low gate threshold voltage.

The BUK9Y11-30B,115 transistor operates according to the Field Effect Transistor (FET) principles. FETs are transistors that use the electric field between the source and the drain terminals to control the current flow-through the channel, by varying the voltage applied to the gate terminal. The FET is a voltage controlled device, with its drain current controlled by the input voltage applied on the gate. This input voltage is used to override the depletion charge in the transistor\'s channel region, thus allowing the current to flow through the channel.

The working principle of the BUK9Y11-30B,115 transistor can be easily understood by considering the device\'s three electrodes: source, drain and gate. The source terminal forms the source of majority carriers, while the drain terminal serves as the output terminal of the majority carriers. The gate terminal can be used to control the majority carriers, which are either electrons or holes, depending on types of the channel. The majority carriers are accelerated through the channel towards the drain, when an appropriate gate voltage is applied. The power gained by the majority carriers is transferred to the device and is dissipatively dissipated as heat.

The application of the BUK9Y11-30B,115 transistor is not strictly confined to the audio application and other electrical systems, but it is also widely used for in high power related applications such as motor drives, DC-DC converters, LED drivers, voltage regulators and power switching circuits. This makes it highly reliable and recommended for high power applications. The transistor is efficient in terms of power gain and switching performance due to its low on-resistance and its fast switching characteristics.

In conclusion, the BUK9Y11-30B,115 is a powerful single N-channel FET that can be used in high-current power applications. It is well suited for audio applications and other electrical systems due to its low noise operation, low input voltage requirement and good thermal performance. Furthermore, its working principle is that of a Field Effect Transistor and it works by manipulating the majority carriers, typically electrons or holes, through the channel region regulated by an applied gate voltage.

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