BUK9Y25-60E,115 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1496-2-ND |
Manufacturer Part#: |
BUK9Y25-60E,115 |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 60V 34A LFPAK |
More Detail: | N-Channel 60V 34A (Tc) 65W (Tc) Surface Mount LFPA... |
DataSheet: | BUK9Y25-60E,115 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.18408 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 21.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9Y25-60E,115 N-Channel Enhancement Mode MOSFET is a voltage controlled FET that utilizes the natural electric field of a doped semiconductor to control current. This type of MOSFET has an incredibly broad range of applications ranging from power supplies to digital circuits, making them one of the most common types of FETs used today. The BUK9Y25-60E,115 MOSFET is particularly suited for applications where low power dissipation, high speed switching, and low on-state resistance are key considerations.
The BUK9Y25-60E,115 MOSFET is a N-Channel Enhancement mode MOSFET, meaning it is designed to be either “on” or “off” and not in some intermediate state. This type of MOSFET is often referred to as a “logic level” MOSFET, as it requires a specific set of voltage levels (called “logic levels”) to be switched. The BUK9Y25-60E,115 can operate easily between -20 to -60 volts and is able to pass a maximum continuous drain current of 115 A. It is also equipped with low gate input capacitance and has fast switching speeds, making it an ideal choice for power switching applications.
A MOSFET works by using the applied voltage between its gate and source terminal to control the width of the “channel” through which current may flow from the source to the drain. A positive voltage between the gate and source produces an electric field which attracts and repels electrons, changing the width of the channel and allowing current to flow through the FET. In an N-Channel Enhancement MOSFET, such as the BUK9Y25-60E,115, a low voltage (typically between 1-5V) is applied between the gate and source, producing an electric field which serves to “enhance” the conduction of current between the drain and source.
The BUK9Y25-60E,115 is an ideal choice for most power switching applications, as it offers excellent performance with low power dissipation, high speed switching, and low on-state resistance. It is also suitable for a broad range of applications in the fields of consumer, automotive, industrial, and medical electronics. Furthermore, due to its excellent switching speed, it is perfect for use in digital circuits where speed is of the essence. The BUK9Y25-60E,115 is widely considered to be one of the most versatile and reliable MOSFETs available today.
The specific data is subject to PDF, and the above content is for reference
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