DMN3035LWN-13

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DMN3035LWN-13 is a transistor array from ON Semiconductor. It is a depletion MOSFET, which is a type of field-effect transistor (FET). A depletion MOSFET is similar to and is closely related to an enhancement mode MOSFET, but is designed to function with a reverse bias or negative voltage connected to the gate, using a body diode for current conduction.

The DMN3035LWN-13 is a high-performance transistor array that integrates three MOSFETs along with three gate control logic to reduce power dissipation in the overall automotive electronic system. It includes three N-channel MOSFETs in a single package. These three transistors are interconnected with a common gate and are configured as high-side switches. Each transistor is able to handle up to 35A with a breakdown voltage of 30V.

This transistor array is specifically designed for automotive applications such as automotive body systems, LED lighting systems and On/Off control applications. It helps reduce the size of the PCB, which reduces the overall system size and cost. It also helps to reduce on-resistance which increases power efficiency and helps to reduce noise in the overall system.

The DMN3035LWN-13 is designed to operate with a PWM input and provides a wide operating temperature range from -40°C to 125°C. It also has a fast switching speed and can operate up to 1MHz. It is capable of providing low power dissipation with the help of its integrated logic. The logic enables the device to be in standby mode when the input voltage is low or zero and when the PWM voltage is high, it provides an active mode for switching.

The DMN3035LWN-13\'s working principle is based on the principle of field-effect transistor (FET). An FET is a three-terminal device in which current is conducted between the source and drain terminals when a voltage is applied to the gate. When the applied voltage is negative (reverse bias), the drain current is reduced, cuts off or shuts off. This is known as the depletion mode, meaning that the transistor operates like a switch that is closed only when the gate voltage is at or below a certain cut-off level. In the DMN3035LWN-13, the three transistors are connected in series, with each transistor\'s gate biased such that only if all three gates have a positive current will the circuit be turned on (active mode). When no positive voltage is applied to any of the three gates, the device is in standby mode.

Overall, the DMN3035LWN-13 is an ideal solution for automotive applications that require high performance, low power dissipation and low cost. Its working principle, based on FETs, enables it to have incredibly low on-resistance and high switching speeds, making it suitable for applications such as LED lighting systems and automotive interface circuitry. This device is also capable of providing low power dissipation due to its integrated gate control logic.

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