DMN3112S-7 Discrete Semiconductor Products

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The DMN3112S-7 MOSFET is a commonly used transistor today and is typically employed in a rated voltage of 700V. It belongs to the family of single MOSFETs, and is typically used in industrial, communications and computing systems due to its high tolerance and performance.

A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of powered and controlled switch. It is essentially an inverter circuit, in that it uses a single low power input to open or close a much larger output. To decide when to open or close the output, the MOSFET uses an internal transistor to relay a signal controlling the output.

At the heart of the MOSFET is the drain and source. These are essentially two small metal plates, separated by an insulator. When a voltage is applied to the Gate electrode, it produces a small electric field across the insulator, which causes it to become conductive. When the Gate voltage is increased, the electric field becomes stronger, and the insulator becomes more conductive. This occurs to a point when the voltage is strong enough that the drain current can flow freely.

The DMN3112S-7 is a standard MOSFET, and is extremely well suited for applications requiring medium power such as amplifiers, 70 MHz switches, digital logic circuits, DC-DC converters, load switches, and bias and temperature compensation circuits. It features an industry-standard D-S polarity in which the drain is the source, and is a key parameter to consider when selecting a MOSFET. The device has an improved SOT-223 hermetically sealed package which has enabled fast switching speeds and low-on-resistance. It is specifically ideal for applications involving telecom, power management and computing. Moreover, it has an extremely low gate charge (QG) and gate capacitance (CGS) to enable efficient operation in many high speed switching applications.

The DMN3112S-7 MOSFET has an operating temperature ranging from -55 to +150 degree Celsius, and a breakdown voltage (BV) of 700V. Its continuous drain current (ID) at 25 degree Celsius is 12A and its maximum peak drain current (IDM) is 31.5A. Its RDS is typically 0.87 ohms, with an RDS on-state resistance (RDS(on)) of 0.57 ohms. It also features a maximum latching current (IDM) of 23A, a Schottky diode forward voltage drop (VF) of 0.6V, and a channel charge (Qg) of 16nC. The DMN3112S-7 has a unique fast body diode recovery characteristic that enables fast switching speeds and improved system efficiency. It has a low gate drive power (VGS) of 4V and a gate threshold voltage (VGT) of 2.0V.

In summary, the DMN3112S-7 MOSFET is an ideal choice for many high speed switching applications. Its low gate charge and gate capacitance enable efficient operation, while its hermetically-sealed package ensures high levels of product integrity. The device’s wide operating temperature range and its low forward voltage drop characteristics make it highly suitable for applications that require high currents. Furthermore, its improved body diode recovery characteristic provides improved system efficiency and higher levels of reliability. The DMN3112S-7 is an ideal choice for applications requiring medium power such as amplifiers, DC-DC converters and load switches.

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