DMN3018SFG-7

Vgs(th) (Max) @ Id:	2.1V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	PowerDI3333-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	697pF @ 15V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	13.2nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	21 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.5A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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AbstractThis paper will discuss the DMN3018SFG-7, a single field-effect transistor. It will first define the device and explain its application field and working principle. Following this, the paper will analyze its performance under different conditions, and contrast it with other single-based FETs. Lastly, a brief conclusion will summarize the device and its application field.IntroductionA field-effect transistor, commonly referred to as a FET, is a type of transistor that operates by manipulating an electric field in a channel between its source and drain, controlling the “on” and “off” states between them. It is typically used as a switch in a circuit, where it takes low power to control the device, making it attractive for use in low-power integrated circuits.The DMN3018SFG-7The DMN3018SFG-7 is a single FET device produced by Diodes, Incorporated. It is a 30 V, 18 A, 30 mW device. This FET is an enhancement-mode transistor and uses a common source configuration. It has an extremely low RDS(on) - an on-state resistance of 0.057Ω - and has an avalanche-driven SOA protection system. It also has a minimum gate charge of 5.6 nC and a maximum gate threshold voltage of 4V.Application Field and Working PrincipleThe DMN3018SFG-7 is used for a variety of applications, including power conversion in industrial, PFC, switch mode power supplies, motor control, and home appliance applications. It is also used in automotive power systems and audio power amplifiers.The device is a P-channel enhancement-mode FET, meaning that the device remains in a non-conductive state until a voltage of the opposite polarity is applied to the gate terminal, switching it to the conducting state. The device works by manipulating the electric field that is generated in the channel region between the source and drain terminals. This electric field creates an enhanced inversion region, which creates a conductive pathway between the source and drain for current to flow, allowing for current to flow between source and drain freely when a voltage is applied across the gate.Performance and ParametersThe DMN3018SFG-7 has several parameters that can be measured and compared in order to judge the device’s performance. For example, the RDS(on) - the on-state resistance - of this device is 0.057Ω, which is an extremely low value. This results in low power loss, and is favorable for applications that require low losses.In addition, the device has an avalanche-driven SOA protection system, ensuring reliable protection against overvoltage and overcurrent conditions. It also has a minimum gate charge rating of 5.6 nC, which is conducive to fast switching speeds, and a maximum gate threshold voltage of 4V, which helps reduce the required gate drive voltage and enables the device to be used with low drive voltage signals.Comparison with Other FETsWhen compared to other similar single-based field-effect transistors, the DMN3018SFG-7 stands out for its low RDS(on) rating and avalanche-driven SOA protection. Its 5.6 nC minimum gate charge rating and 4V maximum gate threshold voltage ensure fast switching speeds and reduced gate drive voltage.ConclusionThe DMN3018SFG-7 is a single FET device produced by Diodes, Incorporated. It is typically used for power conversion in industrial, PFC, switch mode power supplies, motor control, home appliance, automotive power, and audio power amplifier applications. It is a P-channel enhancement-mode device with an extremely low RDS(on) rating of 0.057Ω, an avalanche-driven SOA protection system, and a minimum gate charge rating of 5.6 nC and a maximum gate threshold voltage of 4V. These performance characteristics allow the device to remain suitable for applications that require low power losses, fast switching speeds, and reliable protection against overvoltage and overcurrent scenarios.

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