Allicdata Part #: | DMN30H4D0LFDE-13DI-ND |
Manufacturer Part#: |
DMN30H4D0LFDE-13 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 300V 0.55A 6UDFN |
More Detail: | N-Channel 300V 550mA (Ta) 630mW (Ta) Surface Mount... |
DataSheet: | DMN30H4D0LFDE-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.07685 |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type E) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 630mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 187.3pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 300mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 550mA (Ta) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN30H4D0LFDE-13, which belongs to the type of transistors, is a single FETs MOSFET. This component is usually used as a switch of power electronics since it is a highly reliable component with a low on-state resistance and excellent current drive capability.In this article, its application fields and working principles will be described.
As mentioned above, DMN30H4D0LFDE-13 is a power electronic component and its typical application field is as a power switch. As a switch component, it is usually used in a number of different fields. It is widely used in power supplies, direct current-to-direct current (DC-DC) converters, motor controllers and tire pressure monitoring systems. This component can also be used to optimize power efficiency in various applications, such as mobile phones, notebooks, personal computers and electric vehicles.
Besides its application fields, the working principle of the DMN30H4D0LFDE-13 is also important to understand. This component is an insulated-gate type field effect transistor (IGFET). It works on the principle of current conduction by controlling the input voltage applied to the gate terminal. The control voltage of the DMN30H4D0LFDE-13 will turn on or off the flow of current through the channel and thus can be used to control the flow of current to and from the voltage source of a circuit.
In terms of its construction, the DMN30H4D0LFDE-13 consists of three contacts: source, drain and gate. The source contact is connected to the power source, whereas the drain contact is connected to the load or supply end of the circuit. The gate contact is the conducting channel between the source and the drain contact. This component works on the principle of current conduction. When the gate terminal is supplied with sufficient voltage, a channel is formed between the source and drain contact and current will flow through this channel.
In addition, the DMN30H4D0LFDE-13 can be integrated with other components to control the flow of current through a system. This is useful in applications that require precise control over the flow of current. For example, in a motor controller, the DMN30H4D0LFDE-13 can be used to control the application of power to the motor, thus allowing for better control over the speed and torque of the motor.
Overall, DMN30H4D0LFDE-13 is an important component used in various applications due to its excellent current drive capability and low on-state resistance. Its application fields span from power supplies to motor controllers and its working principle is based on the control of current conduction by controlling the input voltage of the gate terminal. With these advantages and its reliability, this component is certainly an important addition to any power system.
The specific data is subject to PDF, and the above content is for reference
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