DMN31D6UT-7

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The DMN31D6UT-7 is a single field-effect transistor (FET) component that belongs to the DMN family from Vishay, a manufacturer of discrete semiconductor components and systems. The device provides low on-resistance with a low gate-to-source voltage drop, so it is suitable for switching applications. It is also available in an easy-to-use surface-mount package, so it is ideal for designs where space is at a premium.

A FET is a type of active component that uses a gate and channel for controlling the flow of current in a circuit. The DMN31D6UT-7 is a Depletion Mode FET with an enhancement-mode type gate, which means it can be both turned on and turned off. The device has an N-channel type, meaning that current can be switched on and off using the gate voltage. When a positive voltage is applied to the gate, the semiconductor channel underneath is turned on, and current can flow freely through the device. When a negative voltage is applied, the channel is turned off and current can no longer flow.

The DMN31D6UT-7 has a number of features that make it ideal for use in a variety of switching applications. It has a maximum drain-source on-resistance of 35 Ω, which means that it is suitable for use in low-voltage, low-power applications. The device also has a low gate-to-source voltage drop of 0.7V, so it can be used in applications where the required voltage drop is not too great. In addition, the device has a low gate input capacitance of 416 pF, which means it can respond quickly to changes in the gate potential.

The DMN31D6UT-7 is a great choice when it comes to switching applications. It has several features that make it an ideal choice for many different types of designs. In addition to its low on-resistance and gate-to-source voltage drop, the device also has a low gate input capacitance, making it well-suited for rapidly switching applications. The device is also available in an easy-to-use surface-mount package, which makes it ideal for designs where space is at a premium.

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