DMN3020UFDF-7

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-6 (Type F)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.03W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1304pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 8V
Series:	--
Rds On (Max) @ Id, Vgs:	19 mOhm @ 4.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMN3020UFDF-7 is a single, high power, self-protected N-Channel MOSFET with a very low resistance of 7 m_Ω. It is designed with the advanced features of low conduction losses, high dv/dt and integrated protection functions, providing a highly efficient and reliable switch in high power and switching applications.The DMN3020UFDF-7 has been designed to meet the requirements of high voltage and high-current switching and is suitable for use in many applications, including motor control, power conversion, DC-DC converters, lighting and automotive applications.The DMN3020UFDF-7 is an N-Channel MOSFET with a low on-resistance R_dson of 7 m_Ω, rated drain to source voltage of 30 V, maximum drain current of 20 A, and avalanche energy of 10 mJ. It is also protected against electrostatic discharge (ESD) and surge current up to 400V.The DMN3020UFDF-7 also features a safe operating area (SOA) protection, over-voltage protection (OVP), under-voltage lockout (UVLO), over-temperature protection (OTP), and over-current protection (OCP).The SOA protection prevents the device from getting damaged due to excessive current conditions, while the OVP prevents the device from exceeding its rated drain to source voltage. The UVLO protects the device from being turned on until a specified voltage level is reached. The OTP reduces the current flow when the operating temperature of the device exceeds its rated temperature and the OCP turns off the device when the drain current exceeds a specified level.The working principle of the DMN3020UFDF-7 is a combination of the field effect principle and the MOSFETs principle. The field effect principle states that when a voltage is applied to a gate, the drain current will be controlled by the gate voltage (V_G) and the drain-source voltage (V_DS) via the channel. This voltage is typically around 4.5 V when fully on.The MOSFETs principle states that, as current is applied to the drain terminal, the channel is modulated and the gate to source capacitance is increased, which, in turn, affects the amount of current through the gate-source junction, and hence the gate voltage.By combining these principles, the DMN3020UFDF-7 can regulate current from a source or regulate voltage from a source with efficient switching, high power handling and reliable protection.

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