Allicdata Part #: | DMN3026LVTQ-13-ND |
Manufacturer Part#: |
DMN3026LVTQ-13 |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 6.6A TSOT26 |
More Detail: | N-Channel 30V 6.6A (Ta) 1.2W (Ta) Surface Mount TS... |
DataSheet: | DMN3026LVTQ-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.10759 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | TSOT-26 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 643pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN3026LVTQ-13 is a N-Channel Enhancement Mode MOSFET that is frequently used in a variety of applications including switching power supplies and DC-DC converters. It is an Energy Efficient FET that features low gate charge and low on-resistance. The DMN3026LVTQ-13 features a logic level threshold voltage of 0.8V, making this device well-suited for applications that require very low operating voltage.
Application Field
The DMN3026LVTQ-13 is most commonly used in switching power supplies, DC-DC converters, and other applications requiring high current-handling capabilities and low on-resistance. The DMN3026LVTQ-13 is also well-suited for use in battery chargers, motor control, and general high-efficiency power circuits. The low gate charge of the FET allows for a rapid turn-on time, which makes it well-suited for the energy savings requirements in modern electronic systems and consumer products.
Working Principle
The DMN3026LVTQ-13 is an N-Channel Enhancement Mode MOSFET, which utilizes a metal-oxide semiconductor to control the flow of electrical current. The MOSFET consists of a gate, source, and drain, which are used to control the on-off operation of the device. When the gate is high, the MOSFET is in the “on” position, and the electrical current can pass through the device. When the gate is low, the MOSFET is in the “off” position, and no electrical current is able to pass through the device. The DMN3026LVTQ-13 features a logic level threshold voltage of 0.8V, making it ideal for applications that require low operating voltages.
The DMN3026LVTQ-13 also features a low gate charge and low on-resistance. Low gate charge improves switching time and allows for higher switching frequency, which can improve operating efficiency. Low on-resistance reduces power losses and allows for more current-handling capability. Both of these features combine to make the DMN3026LVTQ-13 an excellent choice for energy efficient applications.
In summary, the DMN3026LVTQ-13 is a versatile N-Channel Enhancement Mode MOSFET that is well-suited for use in a variety of applications. It features a logic level threshold voltage of 0.8V, a low gate charge, and low on-resistance, making it an ideal choice for energy efficient applications. This makes the DMN3026LVTQ-13 an excellent choice for use in switching power supplies, DC-DC converters, and other high current applications.
The specific data is subject to PDF, and the above content is for reference
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