DMN3023L-13

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The DMN3023L-13 is a single N-channel enhancement-mode FET (field effect transistor) with low drain-source on-resistance. It is manufactured by Fairchild Semiconductor and is available as a through-hole package or in a lead (Pb) free, surface mount package. It is suitable for a variety of general-purpose amplifier and switch applications.

The DMN3023L-13 provides excellent switching performance with low gate-source threshold voltage (VGS(th)) in a very small package. The FET can pass currents up to 30A and can handle continuous drain-source voltages up to 40V.

The DMN3023L-13 can be used for power management, DC to AC inverter, motor control, and switch mode power supply applications. It is also suitable for various switching and amplifier applications such as robotics and automatic control. The FET is especially suited to applications that require high input impedance and low output impedance.

The DMN3023L-13 operates in one of two modes: enhancement-mode and depletion-mode. In the enhancement-mode, the FET behaves as an openswitch and the gate-source voltage needs to be sufficiently positive for the device to be on. For the device to be off, the gate-source voltage must be equal to the threshold voltage (VGS(th)).

When in the depletion-mode, the device behaves as a close switch and to be on the gate-source voltage should be greater than the threshold voltage (VGS(th)). If the gate-source voltage is equal to the threshold voltage (VGS(th)), the device behaves as an open switch. For the device to be off, the gate-source voltage needs to be negative or less than the threshold voltage (VGS(th)).

The DMN3023L-13 has a steady state maximum drain-source voltage rating (Vds(max)) of 40V, gate-source voltage absolute maximum rating of ±20V and gate-source voltage maximum rating (Vgs(max)) of ±12V. The maximum power dissipation rating of the device is 500mW and it has an operating temperature range of -55°C to 150°C. It also has a maximum switching time of 80ns. The device can pass peak currents up to 30A.

The working principle of the DMN3023L-13 is based on the linear relation between drain-source current (Id) and gate-source voltage (Vgs). When the Vgs is greater than the threshold voltage (Vgs(th)), the drain-source current will begin to flow through the device. The FET acts as avariable resistor, the drain-source current increasing exponentially with increasing gate-source voltage. This is known as the “transfer characteristic” of the device. The drain-source current will be at an upper limit when the Vgs reaches its maximum rating, at which point the device will be saturated.

The FET also has a dual gate-drain architecture. This allows two independent gate voltages to be applied to the two drains, providing increased flexibility in the design of power management systems and switch mode power supply switching systems. The dual gate-drain architecture also enables the FET to be used in analog circuits, as the device can switch between two different drain-source currents at different gate-source voltages.

In conclusion, the DMN3023L-13 is a single N-channel enhancement mode FET with low drain-source on-resistance suitable for a variety of general-purpose amplifier and switch applications. It has low gate-source threshold voltage and can handle continuous drain-source voltages up to 40V. The working principle of the device is based on the linear relation between drain-source current and gate-source voltage. The device is also suitable for a variety of power management, DC to AC inverter, motor control, and switch mode power supply applications.

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