DMN4026SSD-13 Allicdata Electronics

DMN4026SSD-13 Discrete Semiconductor Products

Allicdata Part #:

DMN4026SSD-13DITR-ND

Manufacturer Part#:

DMN4026SSD-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 40V 7A 8SO
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 7A 1.3W Surfac...
DataSheet: DMN4026SSD-13 datasheetDMN4026SSD-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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DMN4026SSD-13 is a type of transistor-field effect transistors-arrays integrated circuit, used to provide independent control of current flow from source to drain using either a single or dual gate initiated switch. It can be mounted on a surface mount technology (SMT).

The DMN4026SSD-13 is composed of two n-channel MOSFET (NMOS), integrated into a thin film process. Its design architecture is such that it provides monolithic level isolation, allowing the user to independently manage the total amount of current that is transferred from source to drain. The internal structure of the device includes a source lead and two 4.7K source resistors to ensure that the current transfer from the source is reduced. The gate voltage is applied directly to the NMOS gates, ensuring the switch is completely closed or open. A thick film resistor network is also included within the integrated circuit to provide current sensing between the source and drain.

The primary application field of the DMN4026SSD-13 is in industrial applications and consumer products, such as motors and power supplies. This transistor is mainly employed for controlling power supplies in industrial environments. The device offers a low voltage drop and low power consumption, allowing it to be used in a wide range of applications. Additionally, the integrated circuit is designed to operate with a 3V power supply, making it suitable for low power applications.

The working principle behind the DMN4026SSD-13 transistors-field effect transistors-arrays integrated circuit can be explained by analyzing the internal structure of the device. When a relatively low operating voltage (typically between 0.5V and 10V) is applied to the individual source lines, the source resistors act as a series resistor to the source current, thus, reducing the total current transfer from the source. When a gate voltage is applied to the NMOS devices, the gate voltage turns on the devices, resulting in a full source-drain current flow. The source resistors further reduce this current, resulting in a lower voltage drop across the source leads.

The DMN4026SSD-13 transistors-field effect transistors-arrays integrated circuit is designed to provide excellent isolation between the source and the drain and offer high current transfer capability. Its low voltage drop and low power consumption make the device suitable for use in industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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