| Allicdata Part #: | DMN4036LK3-13DITR-ND |
| Manufacturer Part#: |
DMN4036LK3-13 |
| Price: | $ 0.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 40V 8.5A DPAK |
| More Detail: | N-Channel 40V 8.5A (Ta) 2.12W (Ta) Surface Mount T... |
| DataSheet: | DMN4036LK3-13 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.16000 |
| 10 +: | $ 0.15520 |
| 100 +: | $ 0.15200 |
| 1000 +: | $ 0.14880 |
| 10000 +: | $ 0.14400 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.12W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 453pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 36 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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DMN4036LK3-13 is a 2A / 60V P-channel enhancement mode Thin-Film-Transistor (TFT) logic-level metal–oxide–semiconductor field-effect transistor (MOSFET). It was originally designed to be used in general switching and high frequency Circuits. It can also be used in high temperature Industrial applications, as well as Audio and Logic Circuits.
A metal–oxide–semiconductor field-effect transistor, or MOSFET, is an electronic component that can control the flow of electricity between two terminals. It is the basic component of digital logic, used to construct logic gates and logic circuits such as those found in computers and other electronic systems. The DMN4036LK3-13 is a type of MOSFET referred to as a p-channel enhancement-mode device.
The basic working principle of a MOSFET relies on the voltage potential between the source terminal and the gate terminal. The source and drain terminals provide the source and the sink of electrons, and the gate terminal controls the voltage applied to the channels between the source and the drain. When a negative voltage is applied to the gate terminal, the MOSFET turns “on,” allowing the electrons to flow freely between the source and the drain. Conversely, when the voltage to the gate terminal is at 0 V, the MOSFET is in its “off” state, preventing the flow of electrons.
The DMN4036LK3-13 transistor is an enhancement-mode device, meaning it starts off in the “off” state and requires a negative voltage to be applied to the gate in order to turn “on.” It is designed for high frequency applications and can handle up to 2A of continuous output current and up to 60V at the drain. It requires a gate voltage between -4.5V and -12V for it to be in the “on” state, making it suitable for use in high frequency circuits.
Most typically, the DMN4036LK3-13 is used in switching applications as its low on-resistance and fast switch times make it suitable as a switch. It is also commonly used in audio and logic circuits due to its high frequency capabilities. In addition, this transistor can be used in high temperature industrial applications, as it is rated to work up to 150°C.
In summary, the DMN4036LK3-13 is a p-channel enhancement-mode metal-oxide-semiconductor field-effect transistor that is primarily used in general switching and high frequency circuits. It has a maximum output current of 2A and can tolerate up to 60V at the drain. It requires a negative voltage for the gate to turn it on, making it suitable for use in high frequency applications such as audio and logic circuits as well as high temperature industrial applications.
The specific data is subject to PDF, and the above content is for reference
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DMN4036LK3-13 Datasheet/PDF